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High Performance Dielectrics for High Energy Density Capacitors

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: N/A
Agency Tracking Number: 26117
Amount: $37,070.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
184 Cedar Hill Street
Marlborough, MA 01752
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Mr. Joseph Piche
 (508) 481-5058
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Aspen Systems proposes to develop high dielectric constant (K), low loss tellurium polymers to meet the design objectives of high energy density capacitors. In the proposed Phase I program we will apply rigorous computational chemical techniques to predict the properties of this new class of polymers. We will attempt the synthesis of the parent polymer of the tellurium family, fabricate films for testing, and measure its electrical properties. initial calculations indicate that these polymers will have better dielectric properties than analogous polymers containing sulfur and selenium. Dr. William Welsh, University of Missouri, St. Louis, will serve as the modeling consultant, and Dr. Daniel Sandman, University of Massachusetts, Lowell, will guide the synthetic work. The development of materials like these proposed polymers are crucial to overcoming the current plateau in dielectric materials development. The development of high dielectric constant, low loss dielectrics will have immediate application in meeting the needs for high energy density capacitors.

* Information listed above is at the time of submission. *

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