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Conductive ZnMgO Enabling High-Efficiency Wide-Bandgap Photovoltaics

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-07-M-0136
Agency Tracking Number: O071-ES3-1036
Amount: $99,857.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: OSD07-ES3
Solicitation Number: 2007.1
Timeline
Solicitation Year: 2007
Award Year: 2007
Award Start Date (Proposal Award Date): 2007-06-08
Award End Date (Contract End Date): 2008-06-08
Small Business Information
8120 Shaffer Parkway
Littleton, CO 80127
United States
DUNS: 783228344
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Lawrence Woods
 Program Manager
 (303) 285-5135
 lwoods@ascentsolar.com
Business Contact
 Janet Casteel
Title: Chief Accounting Officer
Phone: (303) 285-5111
Email: jcasteel@ascentsolar.com
Research Institution
N/A
Abstract

Ascent Solar Technologies (AST) proposes to develop atmospheric pressure chemical vapor deposition (APCVD) of zinc-magnesium-oxide (ZnMgO) as an n-type transparent conducting oxide (TCO) for the top contact that will match the material properties of new buffer and window layers being developed for new wide-bandgap devices. AST’s innovative approach proposes to make the definitive light-absorber layer for high-power, lightweight and flexible thin-film photovoltaics (TFPV). The baseline AST product utilizes single-junction devices with low-bandgap CuInSe2 (CISe) alloys, however better TFPV module performance is predicted through the use of wide-bandgap alloy variations of the CISe based solar absorber. AST has been developing wide-bandgap alloys of CISe based solar absorbers using both aluminum and gallium for simultaneous optimization of the bandgap and material properties. To date, most wide-bandgap device development has used traditional device layers that are optimal for low-bandgap solar absorbers, but are not well matched for wide-bandgap absorbers. In addition, AST will utilize novel lightweight and flexible substrates that are also being developed at AST. Ultra-high TFPV device efficiencies and specific power (> 1500 W/kg) could result from the combined device and substrate technology, exceeding state-of-the-art terrestrial TFPV module efficiencies (at operational temperatures), and enabling terrestrial, spacecraft, balloon and unmanned aircraft technologies.

* Information listed above is at the time of submission. *

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