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Company Information:

Company Name: Arkansas Power Electronics International, Inc.
City: Fayetteville
State: AR
Zip+4: 72701-6559
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: http://www.apei.net
Phone: (479) 443-5759

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $3,369,113.69 33
SBIR Phase II $13,511,156.27 19
STTR Phase I $99,997.00 1
STTR Phase II $749,998.00 1

Award List:

High-Temperature Control Circuitry

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Alexander Lostetter, COO
Award Amount: $100,000.00
Abstract:
The need is becoming ever greater for smaller, lighter, more compact, and higher density power electronics. With the introduction of SiC power diodes and the coming availability of high-temperature SiC power switches on the commercial market, the powerelectronics industry stands on the threshold of… More

Development of High-Temperature Control Circuitry

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / OSD
Principal Investigator: Alexander B. Lostetter, President of APEI, Inc.
Award Amount: $749,749.00
Abstract:
This Phase II SBIR proposal seeks to develop high-temperature electronics by integrating motor drive control and SiC power electronics into a single, compact, highly efficient, reliable, high power density multichip power module (MCPM). Phase II will build upon the Phase I "proof of concept"… More

Very High Temperature (400+ C), High Power Density Silicon Carbide (SiC) Power

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: DOE
Principal Investigator: Alexander B. Lostetter, Dr.
Award Amount: $99,989.00
Abstract:
79139S In power electronic conversion systems(PCS), wide band gap devices, such as silicon carbide (SiC), offer the promise of vastly exceeding the constraining restrictions of silicon by offering higher blocking voltages, higher operating temperatures, higher frequency, and lower switching losses… More

Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: NASA
Principal Investigator: Alexander B. Lostetter, Principal Investigator
Award Amount: $69,954.00
Abstract:
This Small Business of Innovation Research Phase I proposal seeks to investigate and prove the feasibility of developing highly efficient, ultra-lightweight SiC semiconductor based power electronic converters for Earth science mission vehicles. With high temperature operation of power electronics… More

Silicon-Carbide (SIC) Multichip Power Modules (MCPMS) For Power Building Block Applications

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: NASA
Principal Investigator: Alexander Lostetter, Principal Investigator
Award Amount: $69,954.00
Abstract:
This Small Business Innovation Research Phase I project seeks to prove the feasibility of developing high power density modular power electronic building blocks based upon high temperature silicon carbide (SiC) multichip power module (MCPM) technologies. The modular approach will allow for… More

High Power Density (100 kW) Silicon Carbide (SiC) Three-Phase Inverters

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: DOE
Principal Investigator: Alexander B. Lostetter, Dr.
Award Amount: $750,000.00
Abstract:
With worldwide energy consumption becoming an epidemic and the future need for power conservation self evident, the improvement of power conversion systems and the reduction of energy waste has become a global priority. This project will develop very compact, light-weight, silicon carbide power… More

Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: NASA
Principal Investigator: Alexander B. Lostetter, Principal Investigator
Award Amount: $599,995.00
Abstract:
In Phase I of this project, APEI, Inc. proved the feasibility of creating ultra-lightweight power converters (utilizing now emerging silicon carbide [SiC] power switching technologies) through the successful demonstration of power switch operation up to 500 oC. The goal of Phase II will be to… More

High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: NASA
Principal Investigator: Alexander Lostetter, Principal Investigator
Award Amount: $69,972.00
Abstract:
This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for extreme environment exploratory robotic missions (such as Venus landers). SiC digital control ICs will be developed for controlling power… More

DC-Motor Drive Encompassing SiGe Asynchronous Control Electronics for Ultra-Wide (-230 ?C to +130 ?C) Environments

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: NASA
Principal Investigator: Roberto M. Schupbach, Principal Investigator
Award Amount: $69,989.00
Abstract:
This Small Business Innovation Research Phase I project seeks to investigate and prove the feasibility of developing ultra-wide temperature (-230 oC to +130 oC) motor drives utilizing Silicon-Germanium (SiGe) asynchronous logic digital control electronics. Asynchronous circuits remove the concept of… More

Fast Acting Solid State Silicon Carbide (SiC) based Fault Current Limiters for Electrical Distribution Systems

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Roberto Schupbach, Senior Engineer
Award Amount: $69,991.00
Abstract:
This Small Business Innovation Research Phase I project seeks to develop and prove the feasibility of realizing high-voltage, high-power density Solid-State Fault Current Limiter (SSFCL) technology utilizing Silicon Carbide (SiC) thyristors. The proposed fault current detection and limitation… More

Silicon-Carbide (SIC) Multichip Power Modules (MCPMS) For Power Building Block Applications

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: NASA
Principal Investigator: Alexander B. Lostetter, Principal Investigator
Award Amount: $599,982.00
Abstract:
In Phase I, APEI, Inc. proved the feasibility of developing a modular, expandable and fault tolerant SiC-based power system through the successful demonstration of a four-module SiC-based power system capable of dynamic reconfiguration allowing the system to continue delivering power to the load… More

High-Temperature, Lightweight, Rad-Hard Silicon Carbide (SiC) DC/DC Converters for Missile Defense Satellite Power Management and Distribution Systems

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Roberto Schupbach, Senior Engineer
Award Amount: $99,991.00
Abstract:
Power electronic converters are essential in every MDA vehicle, with use in critical systems ranging from electric power management applications, to power distribution, to on-board servo motor/actuator drivers. Advancing state-of-the-art power electronics technologies through the use of SiC… More

High Voltage, High Power Density Bi-Directional Multi-Level Converters Utilizing Silicon and Silicon Carbide (SiC) Switches

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Roberto Schupbach, Senior Engineer
Award Amount: $69,978.00
Abstract:
The objective of this Small Business Innovation Research Phase I project is to develop an isolated bi-directional ac-dc PCM-4 using a novel multi-level modular design approach compatible with silicon carbide (SiC) power switches. The multi-level PCM Module will allow for the design of power-dense,… More

20 kW High Temperature (300+ degrees C), Rad-Hard Silicon Carbide (SiC) DC/DC Power Converters

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Roberto Schupbach, Principal Investigator
Award Amount: $99,983.00
Abstract:
In this Small Business Innovation Research project, APEI, Inc. and TRS Technologies are partnering to develop rad-hard high density DC/DC power converters functional to temperatures in excess of 300 degreesC. Expert utilization of the now emerging silicon carbide (SiC) power devices will allow for… More

DC-Motor Drive Encompassing SiGe Asynchronous Control Electronics for Ultra-Wide (-230 ýýC to +130 ýýC) Environments

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency: NASA
Principal Investigator: Roberto M. Schupbach, Principal Investigator
Award Amount: $599,987.00
Abstract:
In Phase I, the research team formed by APEI, Inc. and University of Arkansas proved the feasibility of developing ultra-wide temperature (-230 oC to +130 oC) motor drives utilizing silicon-germanium (SiGe) asynchronous logic digital control electronics by the successful design, simulation and… More

SBIR Phase I: High-Temperature Silicon-Carbide (SiC) Radio Frequency Wireless Transmitters

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: NSF
Principal Investigator: Roberto M. Schupbach, DEng
Award Amount: $99,983.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop and commercialize silicon carbide (SiC) based radio frequency (RF) transmitters for high-temperature environments. The team will prove the feasibility of the concept and design through the successful demonstration of a SiC… More

Very Low Profile Non-Intrusive Data Acquisition Systems for Turbine High Temperature Bearing Sensors

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Roberto Schupbach, Senior Engineering Manager
Award Amount: $99,984.00
Abstract:
APEI, Inc. is proposing to develop a low profile, non-intrusive, high temperature (300 degrees C) bearing data transmitter system that will allow the in-situ monitoring and diagnostic of bearing health. The proposed high-temperature data transmitter system will be built on high temperature… More

High Power Density, High Efficiency, Fast Transient Response Silicon Carbide (SiC)-Based Power Supplies For the Next-Generation of Radars

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Roberto M. Schupbach, Senior Engineering Manager
Award Amount: $69,946.00
Abstract:
Advances in radar systems are pushing the limits of present radar power supply technology. To enable new concepts, such as active array radar systems, significant improvements (i.e., power densities >200 W/in3, efficiency > 90%, transient response < 10 s, etc.) in radar power supply technology is… More

High Reliablility, High Power Density, Silicon Carbide (SiC) Based Solid-State Circuit Breakers for Next Generation Military Weapons Platforms

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Roberto M. Schupbach, Senior Engineering Manager
Award Amount: $99,980.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project seeks to develop an advanced flexible self-powered robust high power density solid-state circuit breaker (SSCB) through the incorporation of emerging silicon carbide (SiC) device technology and the implementation of advanced thermal… More

SiC-Based Solid-State Fault Current Control System for Vulnerability Reduction of Power Distribution Networks

Award Year / Program / Phase: 2008 / STTR / Phase I
Agency: DOE
Research Institution: U of AK
Principal Investigator: Roberto Schupbach, Dr
Award Amount: $99,997.00
RI Contact: Alan Mantooth
Abstract:
This project will develop high-voltage, high-performance Solid-State Fault Current Controller (SSFCC) technology, needed to minimize recovery time and vulnerability of the electricity network in the event of a large-scale natural disaster. The SSFCC technology, which utilizes Silicon Carbide (SiC)… More

High Temperature, High Power Density Silicon Carbide (SiC) Based Motor Drives for Aircraft Applications

Award Year / Program / Phase: 2008 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Roberto M. Schupbach, Senior Engineering Manage
Award Amount: $746,891.00
Abstract:
The terminal objective of this Phase II work will be the development of compact, fully integrated, high-temperature (250 degrees C), high-power-density SiC-based motor drives for avionics applications. The developed multi-chip power module (MCPM) will target an advanced motor drive application such… More

Fast Acting Solid State Silicon Carbide (SiC) based Fault Current Limiters for Electrical Distribution Systems

Award Year / Program / Phase: 2008 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Roberto Schupbach, Senior Engineering Manage
Award Amount: $299,979.00
Abstract:
Fast and accurate fault protection and isolation has always been an important feature of electric networks; in particular, this includes high reliability and robust networks such as the electric distribution systems of US Navy warships. This feature, however, is now critical for the development of… More

SiC-Based Solid-State Fault Current Control System for Vulnerability Reduction of Power Distribution Networks

Award Year / Program / Phase: 2009 / STTR / Phase II
Agency: DOE
Research Institution: University of Arkansas
Principal Investigator: Roberto Schupbach, Dr
Award Amount: $749,998.00
RI Contact: Alan Mantooth
Abstract:
This STTR project seeks to develop high-voltage, high-performance Solid-State Fault Current Controller (SSFCC) technology utilizing Silicon Carbide (SiC) super gate-turn-off thyristors (SGTOs). Due to improved technical advantages, the proposed SSFCC technology will minimize fault-related power… More

High-Power-Density, Rad-hard, SiC Based, Intelligent Multi Module DC/DC Converter PMAD System For Optimal Energy Utilization

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Roberto Schupbach, Chief Technology Officer
Award Amount: $99,996.00
Abstract:
Increasing power density and efficiency, reducing size and weight, and introducing standardization of electronics systems are all goals of the STSS program. The performance of Power Management and Distribution (PMAD) systems has great impact on the energy storage systems of the spacecraft or… More

Photonically-Controlled SiC based Device Technology for Power Electronic Applications

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Roberto Schupbach, Vice President of Researc
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research Phase I project seeks the development of an optically-triggered silicon carbide based power device technology that will enable the next-generation of EMI/EMP-resistant power electronics systems and ultimately the implementation of advanced concepts such as… More

Very Low Profile Non-Intrusive Data Acquisition Systems for Turbine High Temperature Bearing Sensors

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Roberto Marcelo Schupbach, Chief Technology Officer
Award Amount: $749,999.00
Abstract:
The terminal objective of this Phase II work will be the development of a harsh environment non-intrusive self-powered wireless sensor-transmitter capable of operation to 225 oC and survivable to 300 oC. The developed wireless sensor transmitter will acquire bearing parametric data, such as… More

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NASA
Principal Investigator: Roberto M. Schupbach, Principal Investigator
Award Amount: $99,939.00
Abstract:
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect thrusters. In Phase I of the project, APEI, Inc. will focus on investigating various circuit topologies, developing and applying performance… More

High Temperature Silicon Carbide (SiC) Gate Driver

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Roberto M. Schupbach, Chief Technology Officer
Award Amount: $69,995.00
Abstract:
The objective of this proposal is to develop and commercialize a high temperature gate driver for silicon carbide (SiC) FET switches to enable the development of the next generation of high-efficiency, high-power-density power converters. At the conclusion of Phase I, Arkansas Power Electronics… More

High Power Density, High Efficiency, Fast Transient Response Silicon Carbide (SiC)-Based Power Supplies For the Next-Generation of Radars

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Roberto Schupbach, Chief Technology Officer
Award Amount: $599,979.00
Abstract:
The focus of Phase II will be the development, fabrication, and testing of a highly integrated version of this new class of SiC-based high power density radar power supplies. The final Phase II prototype will achieve the stated power density, efficiency, and functionality goals of this program by… More

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: NASA
Principal Investigator: Bradley Reese, Principal Investigator
Award Amount: $599,999.00
Abstract:
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster,… More

Silicon Carbide Based Power Mangement and Distribution for Space Nuclear Power Systems

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: NASA
Principal Investigator: Brad Reese, Principal Investigator
Award Amount: $99,989.00
Abstract:
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard, 100's kWe power management and distribution (PMAD) system for space nuclear power systems. The PMAD will utilize SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to… More

Low-Power Radiation Hardened Delay-Insensitive Asynchronous Microcontroller Technology Capable of Operating on Extreme Temperature Environments

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: NASA
Principal Investigator: Roberto M. Schupbach, Principal Investigator
Award Amount: $99,990.00
Abstract:
In this SBIR effort, Arkansas Power Electronics International, Inc. (APEI, Inc.) and the University of Arkansas are partnering to develop a versatile, radiation-hardened, low-power, asynchronous 8051-based microcontroller capable of functioning in a very wide temperature range… More

Extreme Environment SiC Wireless Sensor Suite for Nuclear Thermal Propulsion Engines

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jie Yang, Principal Investigator
Award Amount: $99,982.00
Abstract:
In this program, APEI, Inc. will build on successful demonstrations of SiC-based wireless transmitter designs in high temperature and high mechanical load environments to develop silicon carbide (SiC) based integrated wireless sensor-transmitter suites for extreme temperature operation in nuclear… More

High Temperature Energy Harvesting Solution for Autonomous Wireless Sensor Networks in Aircraft Systems

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Jie Yang, Research Engineer – (479) 443-5759
Award Amount: $99,999.00
Abstract:
ABSTRACT: The objective of this SBIR project is to develop a high temperature (225 degrees C +) energy harvesting solution for miniaturized smart wireless sensors that can be easily integrated with aircraft turbine engine components such as roller bearings and bearing assemblies to form a… More

High power density power supply for next-generation radar applications utilizing emerging wide-bandap semiconductor devices

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Roberto Schupbach, Chief Technology Officer – (479) 443-5759
Award Amount: $149,899.00
Abstract:
Present high power density Si-based systems are severely limited by the electrical and thermal performance of active and passive components as well as electronics packaging technology. As a result, the next-generation of radar power supply systems require a new and revolutionary power electronics… More

Intelligent, Fault Tolerant and Robust Silicon Carbide based Power Management Unit for Aircraft Applications

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Roberto Schupbach, Chief Technology Officer – (479) 443-5759
Award Amount: $79,999.00
Abstract:
In this proposed program, the APEI team will design, build, and test a multi-channel fully-integrated, high-temperature (250 degrees C), high speed (<100 s), SiC-based SSPD demonstrator by the end of the program. The proposed SiC-based SSPD will combine APEI, Inc."s advanced high… More

Development of a high performance, cost effective GaN power amplifier packaging for transmit/receive modules

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Brandon Passmore, Sr. Packaging Engineer – (479) 443-5759
Award Amount: $79,997.00
Abstract:
The basic building block for phased array radar systems is based on a transmit/receive module containing MMICs for control and amplification of both transmit and receive paths. The cost, performance, and reliability of these modules have been plagued due to limitations in power amplifier packaging… More

High-Power-Density, Rad-hard, SiC Based, Intelligent Multi Module DC/DC Converter PMAD System For Optimal Energy Utilization

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: DOD
Principal Investigator: Edgar Cilio, Project Engineer – (479) 443-5759
Award Amount: $999,999.00
Abstract:
Recognizing the mission strategic importance of a compact, rad-hard, highly efficient battery management system, Arkansas Power Electronics International, Inc. (APEI, Inc.) is proposing to develop the next generation of rad-hard battery management power converters. This new generation of battery… More

Advanced Locomotive Energy Storage System

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOT
Principal Investigator: Adam Barkley, Sr. Power Electronics R&D Engineer – (479) 443-5759
Award Amount: $149,961.27
Abstract:
At present, trains use various dissipative braking systems to slow and stop, and this significant braking energy is ultimately converted to heat and wasted. APEI, Inc. has proposed a hybrid tender which can capture and reuse a significant fraction of this braking energy (at least 50%). The hybrid… More

Extreme Environment SiC Wireless Sensor Suite for Nuclear Thermal Propulsion Engines

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: NASA
Principal Investigator: Jie Yang, Principal Investigator
Award Amount: $749,958.00
Abstract:
There are a number of critical telemetry measurements to be monitored under continuous field operation, including temperature data across the reactor chamber and the nozzle, pressure data, neutron flux density and flow rate of the propellant. Real-time monitoring of this data in nuclear thermal… More

Design and Development of a Low Cost, Manufacturable High Voltage Power Module for Energy Storage Systems

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOE
Principal Investigator: Brandon Passmore, Dr. – 479-443-5759
Award Amount: $149,987.00
Abstract:
In this project, APEI, Inc. will design and develop a high performance, high voltage SiC MCPM that is low cost, manufacturable, reliable and reworkable. The target utility scale energy storage applications include power conversion systems for grid-tie, solar array, wind turbine, and vehicle-to-grid… More

Multi-Module, Scalable, High Power Density, Radiation-Hardened Power Converter Interface Systems for Space Rated Li-Ion Battery in Satellite Applicati

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Edgar Cilio, Lead Engineer – (479) 443-5759
Award Amount: $149,983.00
Abstract:
ABSTRACT: To significantly reduce procurement overhead and recognizing the mission strategic importance of developing modular power electronics for interfacing the battery to the spacecraft bus, APEI, Inc. is proposing to develop a novel multi-module, inherently scalable, high power density,… More

High Temperature Silicon Carbide (SiC) Gate Driver

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: DOD
Principal Investigator: Bradley Reese, Lead Engineer – (479) 443-5759
Award Amount: $729,991.00
Abstract:
APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high… More

Intelligent SiC-based High Power Density Power Distribution System for Military Ground Vehicle Applications

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Adam Barkley, Research Engineer – (479) 443-5759
Award Amount: $99,987.00
Abstract:
Increasing electrification of the modern military ground vehicle fleet places ever-increasing demand on each vehicle"s electric power generation and distribution systems. The quantity of instrumentation, computing, and electronic weaponry countermeasures systems is rapidly growing, as is their… More

High Temperature (300 &amp;amp;#176;C) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOE
Principal Investigator: Brad Reese, Mr.
Award Amount: $149,824.00
Abstract:
SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Smaller switching and on-state losses coupled with higher voltage blocking capability, and especially its high operating temperature make SiC the ideal semiconductor for high performance, high power density… More

Compact , High-Power Density, High-Voltage Silicon Carbide (SiC) Based Solid-State Circuit Protection Device (SSCPD) Incorporating Advanced Power Pack

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOD
Principal Investigator: Daniel Martin, Senior Power Electronics Engineer – (479) 443-5759
Award Amount: $99,944.00
Abstract:
This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon carbide (SiC) device technology, the implementation of advanced power packaging, and novel fault… More

Intelligent, Fault Tolerant and Robust Silicon Carbide based Power Management Unit for Aircraft Applications

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency: DOD
Principal Investigator: Adam Barkley, Sr. Power Electronics R&D – (479) 443-5759
Award Amount: $499,953.00
Abstract:
Arkansas Power Electronics International, Inc. (APEI, Inc.), and Moog, Inc. have allied to form a team devoted to the development of an intelligent, multi-channel, highly-miniaturized, high-temperature, Silicon Carbide (SiC) based Solid-State Energy Distribution Unit (SSEDU) to support emerging More… More

Design and Development of a Low Cost, Manufacturable High Voltage Power Module for Energy Storage Systems

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency: DOE
Principal Investigator: Brandon Passmore, Dr.
Award Amount: $998,578.00
Abstract:
Arkansas Power Electronics International, Inc. will design and develop a high performance, high voltage ( & gt; 15 kV) SiC MCPM that is low cost, manufacturable, reliable and reworkable. The target utility scale energy storage applications include power conversion systems for grid-tie, solar… More

High Temperature Energy Harvesting Solution for Autonomous Wireless Sensor Networks in Aircraft Systems

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency: DOD
Principal Investigator: Jie Yang, Research Engineer – (479) 443-5759
Award Amount: $749,975.00
Abstract:
ABSTRACT: This Phase II SBIR will focus on the development of a high temperature (225°C) wirelessly powered, distributed wireless network for use in jet turbines. The network nodes will be capable of supporting sensors to monitor environmental variables or actuators for system controls. The… More

Multi-Module, Scalable, High Power Density, Radiation-Hardened Power Converter Interface Systems for Space Rated Li-Ion Battery in Satellite Applicati

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency: DOD
Principal Investigator: Edgar Cilio, Lead Engineer – (479) 443-5759
Award Amount: $736,155.00
Abstract:
ABSTRACT: To significantly reduce procurement overhead and recognizing the mission strategic importance of developing modular power electronics for interfacing the battery to the spacecraft bus, APEI, Inc. is proposing to develop a novel multi-module, inherently scalable, high power density,… More

High power density power supply for next-generation radar applications utilizing emerging wide-bandap semiconductor devices

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Adam Barkley, Sr. Power Electronics R&D – (479) 443-5759
Award Amount: $749,991.00
Abstract:
Next generation Naval warships utilize increasingly powerful and integrated radar systems, such as the next generation Air Missile Defense Radar (AMDR), for their versatile missions. The AMDR system combines a wide variety of functionalities, including: horizon search, missile communication and… More

Reliability of Commercially Available and State-of-the-Art SiC MOSFETs Under Gate Stress and Body Diode Stress

Award Year / Program / Phase: 2014 / SBIR / Phase I
Agency: DOE
Principal Investigator: Robert Shaw, Mr.
Award Amount: $149,949.91
Abstract:
An ideal transistor from a circuit designers standpoint consists of an ultra-low on-resistance, majority carrier switching, low gate current drive, and normally-off design. These features are inherent in the silicon carbide (SiC) power MOSFET, with the small footnote that the device, although having… More

Highly Efficient, High Power Density GaN-based DC-DC Converters for Grid-Tied Energy Storage Applications

Award Year / Program / Phase: 2014 / SBIR / Phase I
Agency: DOE
Principal Investigator: Daniel Martin, Dr.
Award Amount: $149,998.51
Abstract:
APEI, Inc. is proposing in this Phase I effort to design and build a scalable, high-efficiency, high-power density, gallium nitride (GaN)-based DC-DC converter for grid-tied energy storage applications. The project approach will utilize a soft switching dual active bridge DC-DC converter with… More

High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

Award Year / Program / Phase: 2014 / SBIR / Phase II
Agency: DOE
Principal Investigator: Brett Sparkman, Mr.
Award Amount: $999,996.27
Abstract:
In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high… More
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