Fiscal Year:
1984
Title:
ELIMINATION OF EXCESSIVE SURFACE DEFECTS IN GAAS IC MATERIALUSING NON-CONTACT POLISHING
Agency / Branch:
DOD / DARPA
Contract:
N/A
Award Amount:
$380,000.00
Abstract:
THE EXTENSION OF A NON-CONTACT POLISHING TECHNIQUE PREVIOUSLY DEVELOPED FOR IT-VI COMPOUNDS, IS PROPOSED FOR (100) GAAS WAFERS INTEGRATED CIRCUIT APPLICATIONS IN MIND. AN INITIAL TASK WILL BE TO CHARACTERIZE SUCH NON-CONTACT POLISHED SURFACES AND COMPARE THEM WITH CONVENTIONALLY POLISHED SURFACES. FOLLOWING SUCCESSFUL DEVELOPMENT OF THE TECHNIQUE, WE WILL INVESTIGATE THE FEASIBILITY OF SCALE-UP FOR POLISHING THREE-INCH WAFER FOR PHASE II IMPLEMENTATION.
Principal Investigator:
Business Contact:
T.j. magee, mgr.
4087337780
Small Business Information at Submission:
Advanced Research & Applctns
1223 E. Arques Avenue Sunnyvale, CA 94086
EIN/Tax ID:
DUNS:
N/A
Number of Employees:
Woman-Owned:
No
Minority-Owned:
No
HUBZone-Owned:
No