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AlN Based Extreme Ultraviolet (EUV) Detectors
- Small Business Information
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Woman-Owned: YesMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2006Title: AlN Based Extreme Ultraviolet (EUV) DetectorsAgency: NASAContract: NNG06LA43CAward Amount: $100,000.00
Abstract:
This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We plan to devise methods to improve the AlN epitaxial material quality and device structures for EUV detectors. Specifically, we will study the properties of Si and Mg doped AlN epilayers and investigate n- and p-type doping issues in AlN and hence the feasibility for achieving high performance EUV detectors; improve the AlN material quality by exploiting novel template/substrates and growth schemes to reduce the dislocation and native defect density. Use knowledge gained from these investigations to provide new understanding of the III-nitride system and to improve EUV detector structural design. It is intended that EUV detector wafers will also be delivered to NASA scientists for the fabrication of detector arrays. Improved performances of AlN based EUV detectors over conventional existing technologies are expected.Small Business Information at Submission:Research Institution Information:III-N Technology, Inc.
2033 Plymouth Road Manhattan, KS 66503EIN/Tax ID: 481240178DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoKansas State University
2 Fairchild Hall, KSU
Manhattan, KS 66506Contact: Paul LoweContact Phone: (785) 532-6804RI Type: Nonprofit college or university
Award Information
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Agency: National Aeronautics and Space Administration |
Branch: N/A |
Award ID: 80764 |
Program Year/Program: 2006 / STTR |
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Agency Tracking Number: 050097 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |