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Company Information:

Company Name:
III-N TECHNOLOGY, INC.
Address:
4627 5th Street
Lubbock, TX 79416 4727
Phone:
(785) 341-4484
URL:
N/A
EIN:
481240178
DUNS:
17213773
Number of Employees:
7
Woman-Owned?:
Yes
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $339,204.00 4
SBIR Phase II $1,623,205.00 3
STTR Phase I $300,000.00 3

Award List:

Detection of foreign materials in prepregs

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$99,204.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Hongxing Jiang, Principal Investigator
Abstract:
The research proposed here is built on the recent successful fabrication of the first electrically-pumped III-nitride micro-size LED, micro-size LED arrays, and waveguides by the principal investigator's research group at Kansas State University. Newphysical phenomena and properties begin to… More

III-Nitride Integrated Micro-Cavity Photonic Devices

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$425,533.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Hongxing Jiang, President & Chief Scienti
Abstract:
"The research proposed here is built on the promising results obtained in the Phase I project. During Phase I research, we have further improved blue micro-size light emitter output power efficiencies by optimizing the material qualities as well as devicestructures. Several integrated photonics… More

High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Hongxing Jiang, President
Abstract:
The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown… More

SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will be accomplished by further optimizing the microdisplay device structural design and fabrication… More

SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

Award Year / Program / Phase:
2005 / SBIR / Phase II
Award Amount:
$467,672.00
Agency:
NSF
Principal Investigator:
Abstract:
The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will be accomplished by further optimizing the microdisplay device structural design and fabrication… More

AlN Based Extreme Ultraviolet (EUV) Detectors

Award Year / Program / Phase:
2006 / STTR / Phase I
Award Amount:
$100,000.00
Agency:
NASA
Principal Investigator:
Jing Li, Principal Investigator
Research Institution:
Kansas State University
RI Contact:
Paul Lowe
Abstract:
This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We plan to devise methods to improve the AlN epitaxial material quality and device structures for EUV detectors. Specifically, we will… More

3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Zhaoyang Fan, VP for Research
Abstract:
The goal of this SBIR project is to develop next generation inorganic semiconductor based emissive microdisplays with the following merits: Much higher brightness and power efficiency (5 x) than the current filter based LCD and OLED microdisplays. Resolution and pixel density higher than 15 micron… More

STTR Phase I: Erbium Doped III-Nitride Materials and Photonic Structures for Optical Communications

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Research Institution:
Kansas State Univ
RI Contact:
Jingyu S. Lin
Abstract:
The Small Business Technology Transfer Research (STTR) Phase I project will develop metal-organic chemical vapor deposition (MOCVD) growth technology for the in-situ Er incorporation into III-nitride epilayers and device structures grown on Si substrates. Through optical characterization of Er3+… More

3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$730,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Jing Li, R & D Director
Abstract:
The goal of this SBIR project is to develop next generation inorganic semiconductor micro-emitter based emissive microdisplays with the following merits: (1) Much higher brightness and power efficiency (5 x) than the current filter based LCD and OLED microdisplays. (2) Resolution and pixel density… More

III-nitride 1.5 Micron Photonic Devices on Si Substrates

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Jing Li, R & D Director
Research Institution:
Texas Tech University
RI Contact:
Kathleen Harris
Abstract:
Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photonic devices such as modulators, splitters, switches and detectors have been demonstrated. However,… More