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Co-Located Dual Band (VLWIR1/VLWIR2) Focal Plane Arrays for Space Applications

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
59192
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
022-0001
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ADVANCED DEVICE TECHNOLOGY, INC.
4 Raymond Ave, Suite #4B Salem, NH 03079
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: Co-Located Dual Band (VLWIR1/VLWIR2) Focal Plane Arrays for Space Applications
Agency / Branch: DOD / MDA
Contract: HQ0006-03-C-0005
Award Amount: $68,585.00
 

Abstract:

"We propose to develop Co-Located Dual Band (VLWIR1/VLWIR2) Focal Plane Arrays on Strained Layer Superlattices (SLS) Material. We propose innovative Al(x)Ga(1-x)As/InAs SLS layers to produce detectors for very long wavelength (22 um). The key features are:1) SLS Material Growth by Migration Enhanced Epitaxy (MEE) Technique. Type II SLS layers are grown with Migration Enhanced Epitaxy Technique by using a Molecular Beam Epitaxial (MBE) reactor.2) SLS Structures for VLWIR Waveband. Detailed analysis is conducted by using 8-band k.p. model to design SLS structures for Very-Long Wavelength (22um) detection.3) Co-Located Dual Band (VLWIR1/VLWIR2) SLS Structures. Co-Located SLS Structures are grown for VLWIR1 (10-16um) and VLWIR2 (16-22um) waveband ranges with Al(x)Ga(1-x)As/InAs SLS layers.4) Simultaneous Detection of Dual Band Signals. The readout circuitry and the interconnect scheme are designed to detect the two waveband signals in a simultaneous fashion during each frame.5) Cross Talk Elimination. The design of the 2-color structure is such that the cross talk among the wave bands and also among the pixels are eliminated.High Performance Al(x)Ga(1-x) As/InAs dectors were already fabricated and tested for SWIR(1-3um) waveband. The results showed: Detectivity (cm-Hz(1/2)/W)=1.3E12 at 77K, 1.4E11 at 250K, 2E10 at 300K, and quantum efficiency (n) = 72%During Phase 1, the growth of Al(x)Ga(1-x)Sb/InAs SLS structures will be optimized and

Principal Investigator:

Peter J. Kannam
President
6038941402
kannamp@adtinc.mv.com

Business Contact:

James G. Wilen, Jr.
Business Development
6038941402
wilenj@adtinc.mv.com
Small Business Information at Submission:

Advanced Device Technology, Inc.
8 Raymond Ave, Suite #4 Salem, NH 03079

EIN/Tax ID: 042775415
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No