Fiscal Year:
1986
Title:
ARRAYS
Agency / Branch:
DOD / ARMY
Contract:
N/A
Award Amount:
$49,500.00
Abstract:
IMPROVED PROCESSING METHODS FOR THE MANUFACTURING OF HGCDTE INFRARED DETECTORS ON EPITAXIAL MATERIAL IS ADDRESSED IN THIS PROPOSAL. THE GOAL OF PHASE I OF THE PROGRAM IS TO DEVELOP PROCESSING TECHNIQUES ADEQUATE FOR THE PRODUCTION OF 64 X 64 ELEMENT FACAL PLANE ARRAYS. THE DEVICE IS DESIGNED TO SHOW PERFORMANCE LEVEL AT AN ORDER OF MAGNITUDE HIGHER THAN THAT CURRENTLY ACHIEVED. THIS IS ACCOMPLISHED BY INTRODUCING NEW DESIGN FEATURES SUCH AS MULTIPLE LAYER EPITAXIAL STRUCTURE, DOUBLE LAYER SURFACE PASSIVATION, AND TRI-METAL CONTACT SCHEME. THE PRODUCTION COST IS EXPECTED TO BE 50% LOWER THAN THE EXISTING TECHNOLOGY, DUE TO THE ELIMINATION OF SEVERAL PROCESS STEPS THAT ARE DETRIMENTAL TO THE DEVICE PERFORMANCE. THE DETECTOR IS DESIGNED TO GIVE IMPROVED STABILITY AND THERMAL DISSIPATION DUE TO THE ABSENCE OF EPOXY BONDING LAYER BETWEEN THE DETECTOR ARRAY AND THE SUBSTRATE MATERIAL.
Principal Investigator:
Dr peter j kannam
6038864943
Business Contact:
Small Business Information at Submission:
Advanced Device Technology Inc
3 Budway - Unit 29 Nashua, NH 03063
EIN/Tax ID:
DUNS:
N/A
Number of Employees:
Woman-Owned:
No
Minority-Owned:
No
HUBZone-Owned:
No