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LOW DEFECT DENSITY GaN PHOTODIODE
- Small Business Information
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Advanced Technologies/Laboratories IntlAdvanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111View profile »Woman-Owned: YesMinority-Owned: YesHUBZone-Owned: No
- Phase 1
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Fiscal Year: 1998Title: LOW DEFECT DENSITY GaN PHOTODIODEAgency / Branch: DOD / USAFContract: N/AAward Amount: $100,000.00
Abstract:
GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxial lateral overgrowth (ELO) substrates. The ELO substrates will be produced by hydride vapor phase epitaxy which provides a growth rate approximately 50 times faster than conventional growth techniques and will enable uniformly low dislocation density over large areas. High quality p-i-n diodes will be fabricated on the ELO substrates and on sapphire to detemine the effect of dislocation density of detector performance. In Phase II, we will optimize the structure for increased responsivity and response time, shift the wavelength cutoff to shorter wavelengths by using AlGaN, and identify a commercial partner to package the detectors for high-volume sale of UV detectos.Small Business Information at Submission:Principal Investigator:
Robert P Vaudo
2037941100Business Contact:
0Advanced Technology
7 COMMERCE DRIVE Danbury, CT 06810EIN/Tax ID:DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Air Force |
Award ID: 40936 |
Program Year/Program: 1998 / SBIR |
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Agency Tracking Number: 40936 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |