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LOW DEFECT DENSITY GaN PHOTODIODE

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
40936
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
40936
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1998
Title: LOW DEFECT DENSITY GaN PHOTODIODE
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $100,000.00
 

Abstract:

GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxial lateral overgrowth (ELO) substrates. The ELO substrates will be produced by hydride vapor phase epitaxy which provides a growth rate approximately 50 times faster than conventional growth techniques and will enable uniformly low dislocation density over large areas. High quality p-i-n diodes will be fabricated on the ELO substrates and on sapphire to detemine the effect of dislocation density of detector performance. In Phase II, we will optimize the structure for increased responsivity and response time, shift the wavelength cutoff to shorter wavelengths by using AlGaN, and identify a commercial partner to package the detectors for high-volume sale of UV detectos.

Principal Investigator:

Robert P Vaudo
2037941100

Business Contact:


0
Small Business Information at Submission:

Advanced Technology
7 COMMERCE DRIVE Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No