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High Temperature III-V Nitride RF Electronics

Award Information

Agency:
Department of Defense 		Branch:
Air Force 		Award ID:
36221 		Program Year/Program:
1997 / SBIR
Agency Tracking Number:
36221 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1997
Title: High Temperature III-V Nitride RF Electronics
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $100,000.00
 

Abstract:

The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications an din military phased-array radar systems. A1GaN / GaN HEMTs on sapphire subtrates with promising DC and microwave characteristics have recently been demonstrated but further work is needed to develop devices suitable for high temperatures. The goal of this program is to develop AlGaN / GaN HEMTs capable of sustained high power operation. SiC substrates will be employed to improve heat spreading in the device and thermally stable silicides will be developed for the gate contact metallurgy. In Phase I, we will fabricate silicide Schottky contacts to AlGaN test structures and determine the effect of AlGaN composition, doping and surface damage on the barrier height. This thermally stable contact technology will be incorporated into AlGaN / GaN HEMTs in Phase II leading to the production of robust, high performance RF power devices.

Principal Investigator:

Joan M. Redwing
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No