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Interconnect Technology for High Temperature SiC Integrated Circuits

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 32297
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ronald Redwing
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be suitable for high temperature operation. High temperature operation exacerbates atomic diffusion and material migration, devices, contacts and interconnect materials must be designed to remain structurally and electrically stable over the expected life of the device. To date, no reports have been published detailing the long term stability of interconnect materials for SiC devices or integrated circuits at high temperatures. In Phase I we will explore the long term stability of interconnects in contact with the dielectric isolation layer. Our Phase II program will further develop the interconnects and optimize their deposition and patterning for use with high temperature circuits. In addition to their stability, we will examine interaction of the interconnects with ohmic and rectifying contacts and potential wire bonding materials. Phase III research and development will focus on further improvements in reproducibility, quality, and cost for implementation in commercial application specific integrated circuits.

* Information listed above is at the time of submission. *

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