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Silicon Carbide UV Photodiode Arrays

Award Information
Agency: Department of Commerce
Branch: N/A
Contract: 336
Agency Tracking Number: 30932
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1995
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Norihito Hamaguchi
 Research Engineer
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract

UV diode detector arrays have a wide range of both commercial and military applications. Examples include spectral measurement and calibration, pollution monitoring, environmental change monitoring, remote sensing of earth resources, solar UV monitoring, burner monitoring in gas turbines, flame detection in furnaces and for fire detections, etc. SiC is one of the most promising material for UV diode arrays. SiC is sensitive to UV radiation over the 200-400nm range and, because of its large bandgap, is blind to visible and simplifies the use of UV detectors compared to silicon or III-V compounds because there is no interference from other wavelength ranges. The use of SiC also permits on-chip integration of electronics and LEDs as well as the detectors. In Phase I, we will demonstrate the feasibility of SiC UV detectors by fabricating a linear array of p-n junction UV detectors. The diodes will be characterized to determine their sensitivity, frequency response, linearity of response. In Phase II, we will examine integration of the detector arrays with on-chip electronics for additional detetor functionality such as detector multiplexing, frequency response correction and self-calibration.

* Information listed above is at the time of submission. *

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