SECOND GENERATION LEAD CVD PRECURSORS FOR PBTIO3

Award Information

Agency: National Science Foundation

Branch: N/A

Contract: N/A

Agency Tracking Number: 27326

Amount: $300,000.00

Phase: Phase II

Program: SBIR

Solicitation Topic Code: N/A

Solicitation Number: N/A

Timeline

Solicitation Year: N/A

Award Year: 1997

Award Start Date (Proposal Award Date): N/A

Award End Date (Contract End Date): N/A

Small Business Information

Advanced Technologies/Laboratories Intl

7 Commerce Dr

Danbury, CT 06810

United States

DUNS: N/A

HUBZone Owned: No

Woman Owned: No

Socially and Economically Disadvantaged: No

Principal Investigator

Name: Douglas C Gordon
Phone: (203) 794-1100

Business Contact

Phone: () -

Research Institution

N/A

Abstract

CHEMICAL VAPOR DEPOSITION (CVD) OF LEAD-BASED FERROELECTRICS SUCH AS LEAD TITANATE, LEAD ZIRCONATE TITANATE (PZT), AND LEAD LANTHANUM ZIRCONATE TITANATE (PLZT), IS THE MOST PROMISING MANUFACTURING METHOD FOR A WIDE VARIETY OF NEXT GENERATION ELECTRONIC DEVICES INCLUDING RADIATION-HARD NON-VOLATILE MEMORIES, ELECTRO-OPTIC SPATIAL LIGHT MODULATORS, PIEZOELECTRIC ACTUATORS, AND PYROELECTRIC INFRARED DETECTORS. THE USE OF THIS TECHNIQUE IN A MANUFACTURING ENVIRONMENT IS CURRENTLY LIMITED BY THE INADEQUACY OF CURRENT SOURCE REAGENTS (LOW VOLATILITY OR HIGH TOXICITY). RESEARCHERS ARE INVESTIGATING NEW LEAD PRECURSORS SPECIFICALLY DESIGNED TO MEET BOTH FILM GROWTH AND SAFETY REQUIREMENTS.

* Information listed above is at the time of submission. *

You are here

SECOND GENERATION LEAD CVD PRECURSORS FOR PBTIO3