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Stress Analyzer for Microelectronic Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 27986
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 David Kurtz
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a limited macroscopic indication of only planer stress in a single layer. ATM, in conjunction with Penn State University and Proto Manufacturing, proposes to develop a routine wafer stress mapping instrument that offers comprehensive analysis of x-ray diffraction combined with the simplicity/mapping capability of laser deflection. The proposed system utilizes a compact, non-moving fiber-optic detector, a small (only 200 watt) x-ray source, and single exposure measuring technique. Proposed system is based on a commercially proven XRD stress system for bulk metals stress analysis. Automated mapping and thermal cycling capabilities will be included in the system. Successful completion of Phase 1 program will result in a fully operational stress mapping system to be marketed and manufactured for commercial sale during Phase II.

* Information listed above is at the time of submission. *

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