High-Mobility Silicon-Carbide Electronics

Future aeropropulsion systems require high temperature electronics and integrated sensors to meet desired performance levels. The wide bandgap of silicon carbide (SiC) makes it ideally suited for high temperature operation. To date, virtually all SiC-based devices have been fabricated using 6H-SiC. Device performance would significantly increase if 3C-SiC, the cubic form, were available. 3C-SiC has twice the electron and hole mobilities of 6H-SiC and a slightly higher saturated electron drift velocity. Higher mobility results in faster switching speeds, higher gain and lower on- resistances. 3C-SiC is not typically grown in the bulk form because it is not stable at typical sublimation growth temperatures. The objective of this proposal is to grow high quality 3C-SiC. We propose to do this through the development of a novel growth system which will support the large thermal gradients required to efficiently produce 3C-SiC. The anticipated results of this Phase I will be the demonstration of a viable growth process for high mobility 3C-SiC substrates. The benefits will be to make available 3C-SiC substrates and enable the manufacture of high performance devices and sensors capable of operating in harsh, high temperature environments.