HIGH POWER MOS TRANSISTOR

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 25576	Program Year/Program: 1994 / SBIR
Agency Tracking Number: 25576	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1994

Title: HIGH POWER MOS TRANSISTOR

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $60,000.00

Abstract:
The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophisticated control electronics increase costs and decrease the efficiency of power conversion and control. By virtue of their electronic, thermal, and mechanical properties, silicon carbide semiconductors will dramatically decrease the cost and improve the efficiency of power control circuits. Critical to the implementation of SiC power devices is the ability to control the oxide/semiconductor interface.

Principal Investigator:
Seungmoo Choi
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No