BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 25584	Program Year/Program: 1994 / SBIR
Agency Tracking Number: 25584	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1994

Title: BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $99,995.00

Abstract:
We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-Packard. In Phase III, the LEDs will be commercialized and the technology will be extended to GaN based electronics and lasers.

Principal Investigator:
Michael Tischler, Phd
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No