USA flag logo/image

An Official Website of the United States Government

GAN UV/BLUE SOLID STATE LASER

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
25554 		Program Year/Program:
1994 / SBIR
Agency Tracking Number:
25554 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
View profile »
Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: GAN UV/BLUE SOLID STATE LASER
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet the application requirements. Plagued by a dearth of lattice matched substrates, epitaxial nitride thin films have not achieved their intrinsic potential because of non-radiative defects that propagate from the substrate/epi interface. We propose the use of silicon carbide (SiC) substrates for the epitaxial growth of a III-V nitride vertical cavity laser. SiC is closely lattice-matched to the III-V nitrides, has comparable thermal expansion coefficients and is blessed with a large thermal conductivity. The vertical cavity laser incorporates a unique structure to further reduce defects and to increase device efficiency.

Principal Investigator:

Michael Tischler, Phd
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No