Negative Electron Affinity Diamond Vacuum Collector Transistor

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 19679	Program Year/Program: 1993 / SBIR
Agency Tracking Number: 19679	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1993

Title: Negative Electron Affinity Diamond Vacuum Collector Transistor

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $58,463.00

Abstract:
SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMANCE OF THE DEVICE. THE DIAMOND TRANSISTOR IS EXPECTED TO HAVE EXCEPTIONAL HIGH FREQUENCY AND TEMPERATURE PERFORMANCE. PHASE II WILL EXTEND THE PHASE I PROGRAM TO INCLUDE FULL DEVICE DESIGN, FABRICATION, AND TESTING. PHASE III WE WILL EXPECT RAPID COMMERCIALIZATION OF THE DEVICES IN MICROWAVE COMMUNICATIONS, FLAT PANEL DISPLAYS, AND ULTRA FAST SWITCHES.

Principal Investigator:
George Brandes
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No