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Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
18136 		Program Year/Program:
1992 / SBIR
Agency Tracking Number:
18136 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $49,320.00
 

Abstract:

The use of optoelectronic materials, such as gallium arsenide, in applications ranging from fiber optics to solid-state lasers has been growing rapidly. The fabrication of these materials requires exacting control over material composition, purity, uniformity and production rate. Typically these materials contain small amounts of rare earth dopants or impurities which are designated to enhance the optoelectronic effect. Advanced Technology Materials, Inc. has designed novel precursors for these rare earth dopants. These new "source reagents" should facilitate the manufacturing process by increasing the efficiency of incorporation of dopants into optoelectronic materials effectively reducing cost and increasing quality at the same time.

Principal Investigator:

Douglas Gordon
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No