HTSCs as Electrodes in DRAMs

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 18069	Program Year/Program: 1992 / SBIR
Agency Tracking Number: 18069	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1992

Title: HTSCs as Electrodes in DRAMs

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $50,000.00

Abstract:
The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in microelectronics has been severely limited by materials processing and compability problems. Advanced Technology Materials, Inc., has developed a novel approach to solving these compatibility problems through the utilization of high temperature superconductors (HTSCs) as electrode materials. Their development and subsequent use in DRAMs will allow significant increase in memory storage while affording designers maximum flexibility in device configuration.

Principal Investigator:
Jiming Zhang, Phd
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No