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HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 15605
Amount: $799,975.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1993
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
520-b Danbury Road
Danbury, CT 06776
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Duncan W Brown
 Principal Investigator
 (203) 355-2681
Business Contact
Phone: () -
Research Institution
N/A
Abstract

HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIBLY GROW STOICHIOMETRIC FILMS FREE FROM EXCESS SILICON OR CARBON. SINGLE MOLECULE SOURCE REAGENTS, INTRODUCING EQUIVALENT AMOUNTS OF REACTIVE SILICON AND CARBON, ARE PROPOSED FOR MOCVD OF STOICHIOMETRIC BETA SILICON CARBIDE. IN PHASE I SOURCES WILL BE SYNTHEESIZED, THEIR DECOMPOSITION PATHWAYS STUDIED, AND THEIR USE FOR THE CVD OF BETA GROWTH CONDITIONS WILL BE OPTIMIZED AND THE FOCUS WILL SHIFT TOWARDS THE SYNTHESIS OF AN ULTRAHIGH PURITY, UNIMOLECULAR SOURCE AND THE GROWTH OF INTRINSIC BETA-SIC FOR DEVICE APPLICATIONS.

* Information listed above is at the time of submission. *

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