HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 15605	Program Year/Program: 1993 / SBIR
Agency Tracking Number: 15605	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 2: Fiscal Year: 1993

Title: HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $799,975.00

Abstract:
HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIBLY GROW STOICHIOMETRIC FILMS FREE FROM EXCESS SILICON OR CARBON. SINGLE MOLECULE SOURCE REAGENTS, INTRODUCING EQUIVALENT AMOUNTS OF REACTIVE SILICON AND CARBON, ARE PROPOSED FOR MOCVD OF STOICHIOMETRIC BETA SILICON CARBIDE. IN PHASE I SOURCES WILL BE SYNTHEESIZED, THEIR DECOMPOSITION PATHWAYS STUDIED, AND THEIR USE FOR THE CVD OF BETA GROWTH CONDITIONS WILL BE OPTIMIZED AND THE FOCUS WILL SHIFT TOWARDS THE SYNTHESIS OF AN ULTRAHIGH PURITY, UNIMOLECULAR SOURCE AND THE GROWTH OF INTRINSIC BETA-SIC FOR DEVICE APPLICATIONS.

Principal Investigator:
Duncan W Brown
Principal Investigator
2033552681

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
520-b Danbury Road Danbury, CT 06776

EIN/Tax ID:

DUNS: N/A

Number of Employees: N/A

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No