Fiscal Year:
1991
Title:
NOVEL PROCESS FOR THE THIN FILM GROWTH OF YBA2CU3O7
Agency:
NASA
Contract:
N/A
Award Amount:
$499,941.00
Abstract:
REALIZATION OF THE PERFORMANCE ADVANTAGES OF SUPERCONDUCTING DEVICES IN HIGH FREQUENCY COMMUNICATIONS DEPENDS ON DEVELOPMENT OF A LOW TEMPERATURE DEPOSITION PROCESS WITH EXACTING CONTROL OF STOICHIOMETRY AND MORPHOLOGY. MOCVD CAN MEET THESE NEEDS COUPLED WITH EASE OFSCALE-UP. HOWEVER, RECENT WORK AT ADVANCED TECHNOLOGY MATERIALS, INC. SHOWS THAT YBACUO AND BISRCACUO FILMS GROWN BY MOCVD AT TEMPERATURES LESS THAN 800 DEGREES CENTIGRADE ARE AMORPHOUS MIXTURES OF OXIDES, WITH CAULIFLOWER-LIKE MORPHOLOGY INDICATIVE OF LOW SURFACE MOBILITY GROWTH. SURFACE MOBILITIES CAN BE ENHANCED THROUGH THE USE OF A PLASMA. MOREOVER, PLASMA ASSISTED LASER ABLATION, SPUTTERING AND REACTIVE EVAPORATION HAVE ALREADY BEEN UTILIZED FOR THE IN-SITU GROWTH OF SUPERCONDUCTING THIN FILMS AT 400-600 DEGREES CENTIGRADE. AT 600 DEGREES CENTIGRADE, A 50 EV OXYGEN ION BEAM OXIDIZED BAF2 TO BAO, WHICH SUGGESTS THAT PLASMA ENHANCED-CVD WILL EFFECT THE IN-SITU GROWTH OF SUPERCONDUCTING THIN FILMS WITH THE EXISTING REAGENTS AT 600 DEGREES CENTIGRADE OR BELOW. PHASE I WILL DEMONSTRATE THE GROWTH OF IN-SITU SUPERCONDUCTING THIN FILMS BY PECVD. PHASE II WILL FOCUS ONPROCESS OPTIMIZATION THRU THE CORRELATION OF PLASMA PROPERTIES DETERMINED BY IN-SITU DIAGNOSTICS WITH THE HTSC THIN FILM CHARACTERIZATION DATA. THIS WILL ALLOW A PHASE III SCALE-UP OF THE PECVD PROCESS TO MULTIWAFER PRODUCTION.
Principal Investigator:
James D. Parsons
Director, Mocvd Research
2033552681
Business Contact:
E. g. banucci
PRESIDENT
2033552681
Small Business Information at Submission:
Advanced Technology Materials
520-b Danbury Road New Milford, CT 06776
EIN/Tax ID:
DUNS:
N/A
Number of Employees:
N/A
Woman-Owned:
No
Minority-Owned:
No
HUBZone-Owned:
No