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Nanostructured ZnO for Rad-Hard Microelectronics Components
Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-14-P-0006
Agency Tracking Number: T133-001-0036
Amount:
$149,928.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
DTRA133-001
Solicitation Number:
2013.3
Timeline
Solicitation Year:
2013
Award Year:
2014
Award Start Date (Proposal Award Date):
2014-06-15
Award End Date (Contract End Date):
2015-01-14
Small Business Information
44 Hunt Street
Watertown, MA
02472-4699
United States
DUNS:
073804411
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Zsolt Marton
Title: Principal Investigator
Phone: (617) 668-6801
Email: ZMarton@RMDInc.com
Title: Principal Investigator
Phone: (617) 668-6801
Email: ZMarton@RMDInc.com
Business Contact
Name: Joanne Gladstone
Title: Vice President of Operations
Phone: (617) 668-6801
Email: JGladstone@RMDInc.com
Title: Vice President of Operations
Phone: (617) 668-6801
Email: JGladstone@RMDInc.com
Research Institution
Name: Stub
Abstract
ABSTRACT: This project is aiming at developing basic semiconductor components (field-effect transistors) that will be deployed in highly radioactive environment (nuclear plants, space, radioactive waste storage facilities). Radiation Monitoring Devices (RMD), Inc. BENEFITS: ANTICIPATED BENEFITS This new concept of radiation-hard microelectronics will be compatible with recent IC technology in terms of production. These novel, wide-bandgap semiconductor devices could be deployed and reliably used for a long period of time in
* Information listed above is at the time of submission. *
