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Company Information:

Company Name: AC MATERIALS, INC.
City: Winter Park
State: FL
Zip+4: 32792
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (407) 679-3395

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $265,688.00 5
SBIR Phase II $863,432.00 2

Award List:

Diode-pumped, Tunable 3 micron Laser Sources

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Arlete Cassanho
Award Amount: $63,916.00

Material for Efficient Laser Diode Pumped Laser Upconversion Phosphor Technology

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency: NSF
Principal Investigator: Arlete Cassanho
Award Amount: $64,334.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Arlete Cassanho, President
Award Amount: $137,438.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency: NSF
Principal Investigator: Arlete Cassanho
Award Amount: $0.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency: NSF
Principal Investigator: Arlete Cassanho
Award Amount: $398,330.00

High Efficiency Mid-Infrared Solid State Lasers

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Arlete Cassanho, President
Award Amount: $0.00
Abstract:
AC Materials proposes development of a 4 micron Ho:BaY2F8 laser pumped by a Cr:LISAF laser in response to Air Force needs for an efficient pulsed source in the 3-5 micron region. Under the Phase I program lasing at 3.9 micron was demonstrated, with over 30mJ power per pulse. The Phase II effort… More

High Efficiency Mid-Infrared Solid State Lasers

Award Year / Program / Phase: 2001 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Arlete Cassanho, President
Award Amount: $465,102.00
Abstract:
AC Materials proposes development of a 4 micron Ho:BaY2F8 laser pumped by a Cr:LISAF laser in response to Air Force needs for an efficient pulsed source in the 3-5 micron region. Under the Phase I program lasing at 3.9 micron was demonstrated, with over 30mJ power per pulse. The Phase II effort… More