You are here

Home » Company Details

ARKTONICS LLC

Company Information
Address
1339 S PINNACLE DR
FAYETTEVILLE, AR 72701-7781
United States
Information

UEI: EJLBRBJ24693

# of Employees: 4
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: Yes

Award Charts




Award Listing

  • Record 1 TO 7

  1. Monolithically Integrated GeSn Photodetectors on Si for High Performance IR Image Sensors

    Amount: $150,000.00

    In this project, Arktonics proposes to develop monolithically integrated GeSn photodetectors on Si for high performance IR imaging sensors.  The proposed sensing materials, GeSn semiconducting alloys ...

    STTRPhase I2023Department of Defense Air Force

  2. SiGeSn LADAR Receiver

    Amount: $1,250,000.00

    In this project, Arktonics will develop a revolutionary infrared sensor technology platform offering monolithic integration of Complementary Metal–Oxide–Semiconductor (CMOS) circuits with a high-p ...

    SBIRPhase II2023Department of Defense Air Force

  3. Aspect Ratio Trapping Grown SiGeSn Lasers for CMOS Monolithic Integration

    Amount: $250,000.00

    In this project, Arktonics proposes to develop monolithically integrated high-performance (Si)GeSn lasers by using the novel aspect ratio trapping (ART) growth technology. The proposed transformative ...

    STTRPhase I2023Department of Defense Office of the Secretary of Defense

  4. GeSn Avalanche Photodiode

    Amount: $750,000.00

    In this project, Akrtonics proposes to develop a novel Si based revolutionary infrared sensor technology potentially offering monolithic integration of CMOS circuits with a high-performance detector a ...

    STTRPhase II2022Department of Defense Air Force

  5. GeSn Avalanche Photodiode

    Amount: $50,000.00

    The goal of the project is to develop a novel separate absorption and charge multiplication (SACM) avalanche photodiode (APD) operating at wavelengths of 2 um and even longer.  The proposed APD can a ...

    STTRPhase I2021Department of Defense Air Force

  6. Epitaxial Technologies for SiGeSn High Performance Optoelectronics Devices

    Amount: $750,000.00

    ABSTRACT:Silicon-based lasers/detectors have long been desired for owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the r ...

    SBIRPhase II2016Department of Defense Air Force

  7. Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

    Amount: $150,000.00

    ABSTRACT: Silicon-based lasers/detectors have long been desired for owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the ...

    SBIRPhase I2015Department of Defense Air Force
US Flag An Official Website of the United States Government