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Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic…

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
Program Year/Program:
2014 / SBIR
Agency Tracking Number:
N121-001-0874
Solicitation Year:
2012
Solicitation Topic Code:
N121-001
Solicitation Number:
2012.1
Small Business Information
Sundew Technologies, LLC
3400 Industrial Lane Unit 7 Broomfield, CO 80020-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2014
Title: Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
Agency / Branch: DOD / NAVY
Contract: M67854-14-C-0244
Award Amount: $499,855.00
 

Abstract:

This project targets the development of a commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project will provide a higher quality substitution for commonly used PEVCD SiN passivation layers. These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems, as well as commercial products. Previously, a large scale survey was used to evaluate multiple possible ALD processes and ALD process conditions. Following the selection of the most promising process, the focus of this project now shifts to process integration, reduced cost and the commercialization of SiN ALD equipment.

Principal Investigator:

Ofer Sneh
President
(303) 466-2341
ofer@sundewtech.com

Business Contact:

Anat Sneh
Vice President
(303) 466-2341
anat@sundewtech.com
Small Business Information at Submission:

Sundew Technologies, LLC
3400 Industrial Lane Unit 7 Broomfield, CO -

EIN/Tax ID: 841612757
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No