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ADROIT MATERIALS, INC.
UEI: LSK7AWA81NA1
# of Employees: 8
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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1.2 kV class GaN on GaN vertical U-MOSFET with reach through protection and shielding by Mg implantation
Amount: $200,000.00C56-20a-273160Machine driven processes such as pumps, fans, compressed air, and materials handling and processing accounted for 68% of electricity use (2,840 TBtu direct use) by U.S. manufacturing in ...
SBIRPhase I2023Department of Energy -
Defect-controlled AlGaN APDs for UV photon counting and space exploration
Amount: $150,000.00The proposed work aims to demonstrate significant improvement in AlGaN-based detectors and detector arrays by employing single crystal AlN substrates, which practically eliminates leakage induced by s ...
SBIRPhase I2023National Aeronautics and Space Administration -
High Power UVC Light Emitting Diodes for Disinfection Applications
Amount: $1,315,219.00Based on the successful completion of the Phase II effort that demonstrated state-of-the-art UVC LEDs with emission around 265 nm and output power of 25 mW (unpackaged device), a continuation of this ...
STTRPhase II2023Department of Defense Army -
Solar blind UVC and VUV detectors
Amount: $140,000.00As an alternative to MCPs and PMTs, it is proposed to use AlGaN-based UV detectors. These detectors are based on ultra-wide bandgap AlGaN, which allows for solar blind detection of light with waveleng ...
SBIRPhase I2023Department of Defense Navy -
kV-class GaN-based Junction Barrier Schottky diodes using ion implantation
Amount: $250,000.00The objective of this work is to demonstrate GaN-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process developed in previously ARPA-E funded projects. The centerpiece of ...
SBIRPhase I2021Department of Energy ARPA-E -
kV-class GaN-based Junction Barrier Schottky diodes using ion implantation
Amount: $250,000.00The objective of this work is to demonstrate GaN-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process developed in previously ARPA-E funded projects. The centerpiece of ...
SBIRPhase II2021Department of Energy ARPA-E -
Ion implantation-enabled fabrication of AlN based Schottky diodes
Amount: $250,000.00The objective of this work is to develop AlN-based Schottky diodes with electrical properties that will drastically reduce forward conduction losses compared to existing high-power diodes. This object ...
SBIRPhase I2021Department of Energy ARPA-E -
Ion implantation-enabled fabrication of AlN based Schottky diodes
Amount: $250,000.00The objective of this work is to develop AlN-based Schottky diodes with electrical properties that will drastically reduce forward conduction losses compared to existing high-power diodes. This object ...
SBIRPhase II2021Department of Energy ARPA-E -
Novel, Deep-UV APDs for Atomic Clocks and Space Observation
Amount: $750,000.00The target of this project is to develop a compact and efficient avalanche photodiode (APD) based on Al rich AlGaN to replace incumbent photomultiplier tubes in atomic clocks. The advance over existin ...
SBIRPhase II2021National Aeronautics and Space Administration -
Novel, Deep-UV APDs for Atomic Clocks and Space Observation
Amount: $124,999.00The target of this project is to develop a compact and efficient avalanche photodiode (APD) based on Al-rich AlGaN to replace currently used photomultiplier tubes in atomic clocks. The advance over ex ...
SBIRPhase I2020National Aeronautics and Space Administration
