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Company Information:

Company Name:
Agnitron Technology Inc.
Address:
6595 Edenvale Blvd
Suite 180
Eden Prairie, MN 55346-
Phone:
(952) 937-7505
URL:
EIN:
262833756
DUNS:
054898964
Number of Employees:
8
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $299,888.17 2
STTR Phase I $149,590.00 1
STTR Phase II $999,042.00 1

Award List:

Solar Blind MgZnO Photodetectors

Award Year / Program / Phase:
2013 / STTR / Phase I
Award Amount:
$149,590.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, President and CEO – (952) 937-7505
Research Institution:
North Carolina State University
RI Contact:
John Rowe
Abstract:
This Phase I program is focused on enhancement of the performance of MgZnO based solar blind detectors. MgZnO alloys have superior optoelectronic properties with bandgaps suitable for solar blind detection. Issues related to doping and miscibility will be addressed. This will involve the use of… More

SBIR Phase I: Novel Heterostructure Doping for Optoelectronic Devices

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project addresses the development of a novel technique for improving the efficiency of ultraviolet (UV) light emitting devices (LEDs). The UV LED fabrication process typically includes deposition of thin semiconductor films onto substrates that… More

Investigation of Donor and Acceptor Ion Implantation in AlN

Award Year / Program / Phase:
2014 / SBIR / Phase I
Award Amount:
$149,888.17
Agency:
DOE
Principal Investigator:
Abstract:
AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to achieve full utilization of AlN for power electronics applications is the development of a doping… More

Solar Blind MgZnO Photodetectors

Award Year / Program / Phase:
2014 / STTR / Phase II
Award Amount:
$999,042.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, President – (952) 937-7505
Research Institution:
University of Central Florida
RI Contact:
Winston Scheonfeld
Abstract:
This project address the fabrication of solar blind detectors from the MgZnO material system. Both MBE and MOCVD material growth techniques will be used for deposition of the required material layers. Simulation software we be used to aid in the design of the photodetector structure. Devices will be… More