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Company Information:

Company Name:
Agnitron Technology
Address:
6595 Edenvale Blvd
Suite 180
Eden Prarie, MN 55346-2506
Phone:
(952) 937-7505
URL:
N/A
EIN:
262833756
DUNS:
054898964
Number of Employees:
8
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $299,888.17 2
STTR Phase I $149,590.00 1

Award List:

Solar Blind MgZnO Photodetectors

Award Year / Program / Phase:
2013 / STTR / Phase I
Award Amount:
$149,590.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, President and CEO – (952) 937-7505
Research Institution:
North Carolina State University
RI Contact:
John Rowe
Abstract:
This Phase I program is focused on enhancement of the performance of MgZnO based solar blind detectors. MgZnO alloys have superior optoelectronic properties with bandgaps suitable for solar blind detection. Issues related to doping and miscibility will be addressed. This will involve the use of… More

SBIR Phase I: Novel Heterostructure Doping for Optoelectronic Devices

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project addresses the development of a novel technique for improving the efficiency of ultraviolet (UV) light emitting devices (LEDs). The UV LED fabrication process typically includes deposition of thin semiconductor films onto substrates that… More

Investigation of Donor and Acceptor Ion Implantation in AlN

Award Year / Program / Phase:
2014 / SBIR / Phase I
Award Amount:
$149,888.17
Agency:
DOE
Principal Investigator:
Abstract:
AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to achieve full utilization of AlN for power electronics applications is the development of a doping… More