High Temperature Silicon Carbide (SiC) Gate Driver
APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high temperature SiC power modules, APEI, Inc. will integrate the developed gate driver into this SiC power module and demonstrate a complete high temperature intelligent power module by the end of this Phase II.
Small Business Information at Submission:
Business Operations Manag
Arkansas Power Electronics International
535 W. Research Center Blvd. Suite 209 Fayetteville, AR -
Number of Employees: