You are here
High Voltage Metal Insulator Metal (MIM) Capacitor Technology
Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00024-12-P-4092
Agency Tracking Number: N121-071-1041
Amount:
$149,960.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
N121-071
Solicitation Number:
2012.1
Timeline
Solicitation Year:
2012
Award Year:
2012
Award Start Date (Proposal Award Date):
2012-06-05
Award End Date (Contract End Date):
2014-02-01
Small Business Information
3400 Industrial Lane
Unit 7
Broomfield, CO
-
United States
DUNS:
100363857
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Ofer Sneh
Title: Director of Technology
Phone: (303) 466-2341
Email: ofer@sundewtech.com
Title: Director of Technology
Phone: (303) 466-2341
Email: ofer@sundewtech.com
Business Contact
Name: Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
Name: Stub
Abstract
This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.
* Information listed above is at the time of submission. *
