Silicon Carbide Device Model Development for Circuit Simulations

During this program, United Silicon Carbide, Inc. (USCi) will develop compact SiC power device models, prepare them for industry acceptance, and gain support of the models from commercial simulator suppliers. In Phase I, we propose to develop an initial compact circuit model for a 4H-SiC power MOSFET that will accurately describe device performance in the temperature range from -40 degrees C to 250 degrees C. The model will be based on a standard SPICE MOSFET model that will be expanded to include parameters reflecting the SiC device physics, thus allowing more accurate and robust electrical representation of the device in circuit simulation. In Phase II, we will fully develop the Phase I model to include electrical, thermal, mechanical, and material parameters that will allow 4H-SiC power MOSFETs to be used in system level modeling applications. We will also develop similar models for JFETs and Schottky diodes to be able to model different power system topologies. In Phase III, we will provide models commercially and achieve industry adoption through industry standards organizations (Compact Model Council and Global Semiconductor Alliance) and collaboration with commercial system vendors.