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Defect Engineering of TlBr for Room Temperature Radiation Detection

Award Information
Agency: Department of Homeland Security
Branch: N/A
Contract: HSHQDC-12-C-00099
Agency Tracking Number: DNDOSBIR12-04-FP-001-CAPE
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 12.1-004
Solicitation Number: N/A
Timeline
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-09-18
Award End Date (Contract End Date): 2013-03-18
Small Business Information
6 Huron Drive Suite 1B
Natick, MA 01760-1325
United States
DUNS: 807651260
HUBZone Owned: Unavailable
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Shariar Motakef
 motakef@capesim.com
Business Contact
 Shariar Motakef
Email: motakef@capesim.com
Research Institution
N/A
Abstract

TlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this material. This proposal is focused on controlling the point, chemical, and crystalline defects in TlBr to minimize ionic conduction, and thereby enable operation of this promising detector at room temperature.

* Information listed above is at the time of submission. *

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