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In-situ Stress and Temperature Optical Monitoring for low-cost heteroepitaxial substrates for HgCdTe infrared detectors.
Title: Product Development Manag
Phone: (734) 426-7977
Email: cataylor@k-space.com
Title: General Manager
Phone: (734) 426-7977
Email: djbarlett@k-space.com
An integrated, in-situ, real-time, optical metrology system will be developed to measure temperature, film stress and reflectivity during CdTe and HgCdTe-based deposition applications. Temperature measurement will be performed using band-edge thermometry and blackbody radiation analysis to provide a measurement range of 25-800 degrees C on Si, GaAs, and CdTe-buffered Si/GaAs substrates. The system will be capable of full 2D substrate temperature profiling to provide uniformity analysis. Stress and reflectivity measurement will be made using an etalon-based multiple laser beam array. All measurements will be made simultaneously and will be synchronized to the substrate rotation. The system will be designed with the flexibility to be mounted on multiple reactor geometries.
* Information listed above is at the time of submission. *