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Nanomembrane Integrated Lasers on Silicon

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-11-C-0026
Agency Tracking Number: F08B-T08-0077
Amount: $749,991.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF08-BT08
Solicitation Number: 2008.B
Timeline
Solicitation Year: 2008
Award Year: 2011
Award Start Date (Proposal Award Date): 2010-12-16
Award End Date (Contract End Date): N/A
Small Business Information
202 East Border Street Suite 149
Arlington, TX 76010-
United States
DUNS: 824987825
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Hongjun Yang
 Senior Scientist
 (817) 714-9368
 hyang@semerane.com
Business Contact
 Fang Lin
Title: CEO
Phone: (817) 301-5398
Email: flin@semerane.com
Research Institution
 University of Wisconsin-Madison
 Cheryl Gest
 
21 N. Park Street Suite 6401
Madison, WI 53715-
United States

 (608) 262-3822
 Nonprofit College or University
Abstract

ABSTRACT: The objective of this STTR Phase II proposal is to continue and complete the development of a commercially practical laser source on silicon (Si), with the demonstration of high performance ultra-compact electrically-pumped infrared laser prototype at 1550 nm band. Currently, silicon (Si)-based photonics are bottlenecked by the lack of an economical yet reliably integrated on-chip laser source. In this program, Semerane Inc. will work closely with University of Wisconsin-Madison and University of Texas at Arlington to remove this most difficult bottleneck by developing the long demanded on-Si lasers, based on a low-temperature nanomembrane integration technology. The on-silicon infrared laser, namely membrane-reflector vertical-cavity surface-emitting laser (MR-VCSEL), will exhibit high efficiency, ultra compactness (DBR-free), high reliability and wide spectral tunability. With the proposed laser structure to be directly built on Si, the highly desirable monolithic integration of the laser with Si CMOS will eventually be realized. The success of the proposed work will lead to the next-generation fully integrated electronics and photonics (EP) integrated circuits and will pave the way toward high-density 3D integrated EP systems. It is expected that the successful development of the on-Si laser through this STTR project will generate significant impact on the military and commercial communication and sensing applications. BENEFIT: The success of the development of economical yet reliable lasers on Si permits monolithic integration of sensing, spectroscopy, signal processing and computing all on a single chip. The single-chip photonics and electronics integration offers an affordable solution to the multi-functional platform with revolutionary influence in many areas of science, technology and everyday life. Such examples include high capacity low-cost data network, optical computing, flexible displays, solid state lighting, energy harvest, infrared night vision, image and gas sensing for medical, biological, environmental, military, and homeland security applications.

* Information listed above is at the time of submission. *

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