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MOCVD of High Performance Complex Oxide Films for Switchable Film Bulk Acoustic Resonators

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-11-C-0219
Agency Tracking Number: A11A-016-0005
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A11a-T016
Solicitation Number: 2011.A
Timeline
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-09-06
Award End Date (Contract End Date): N/A
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ -
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Nick Sbrockey
 Principal Scientist
 (732) 302-9274
 sbrockey@structuredmaterials.com
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: GSTompa@structuredmaterials.com
Research Institution
 Univ. of Colorado - Colorodo Spring
 Gwendolyn A Gennaro
 
Office of Sponsored Programs 4120 Austin Bluffs Parkway
Colorado Springs, CO 80919-
United States

 (719) 255-3153
 Nonprofit College or University
Abstract

In this STTR program, Structured Materials Industries, Inc. (SMI) and partners will develop high efficiency, switchable RF filters. The technical approach is based on thin films of paraelectric BaxSr1-xTiO3 and SrTiO3, which can show piezoelectric behavior under an applied DC bias. When integrated into resonator structures, these materials can act as both an RF filter and an RF switch. Combining these functions will greatly simply manufacture of RF circuits and reduce RF losses, resulting in communication systems with greater efficiency, smaller footprint and reduced cost. The critical enabler for our approach is SMI's metal organic chemical vapor deposition (MOCVD) technology, which can produce complex oxide films of exceptional quality for efficient RF filter operation. In addition, MOCVD provides a direct and quantitative means for compositional grading and compositional doping, which can further enhance device properties such as temperature stability and reduce dielectric loss. MOCVD is scalable to large wafer sizes and high volume production, for ultimate production of the switchable RF filters in high volume and at low cost. MOCVD is also compatible with standard semiconductor fabrication techniques, which will enable a greater degree of integration for the RF filters, for greater functionality and additional cost reduction.

* Information listed above is at the time of submission. *

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