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High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CA68C
Agency Tracking Number: 095450
Amount: $599,351.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: S3.05
Solicitation Number: N/A
Timeline
Solicitation Year: 2009
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-06-01
Award End Date (Contract End Date): 2013-05-31
Small Business Information
FL
Orlando, FL 32826-2930
United States
DUNS: 098250561
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 John Elmes
 Principal Investigator
 (407) 275-1174
 jelmes@apecor.com
Business Contact
 John Elmes
Title: Business Official
Phone: (407) 275-1174
Email: jelmes@apecor.com
Research Institution
 Stub
Abstract

Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultra-high power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high temperature device packaging technology. The objective of this proposed research is to develop a ultra-compact, hybrid power module packaging technology based on the use of double leadframes and direct leadframe-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degrees Celsius. The unique advantages of this innovative solution include very high current carrying capability, low package parasitic impedance, low thermo-mechanical stress at high temperatures, double-side cooling, and modularity for easy system-level integration. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and capable of operating from 450C to -125C.

* Information listed above is at the time of submission. *

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