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Home » Awards » Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Information

Agency: National Aeronautics and Space Administration	Branch: N/A	Award ID:	Program Year/Program: 2011 / SBIR
Agency Tracking Number: 095060	Solicitation Year: 2009	Solicitation Topic Code: S3.04	Solicitation Number:

Small Business Information: Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd. Fayetteville, AR -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 2011

Title: Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Agency: NASA

Contract: NNX11CA66C

Award Amount: $599,999.00

Abstract:
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

Principal Investigator:
Bradley Reese
Principal Investigator
4794435759
breese@apei.net

Business Contact:
Sharmila Mounce
Business Official
4794435759
smounce@apei.net

Small Business Information at Submission:

Arkansas Power Electronics International, Inc.
535 West Research Center Boulevard, Suite 135 Fayetteville, AR 72701-6959

EIN/Tax ID: 710810115

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: Yes