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AMETHYST RESEARCH INC

Company Information
Address
5738 HUETTNER CT STE 100
NORMAN, OK 73069-9519
United States


http://www.amethystresearch.com

Information

UEI: PXQASG336J91

# of Employees: 12


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Extended SWIR Single Photon Avalanche Photo Detector Technology for Bioimaging

    Amount: $248,524.00

    There are two principal technical limitations and challenges associated with bioimaging. First, depth imaging is limited by light scattering and diffraction in biological tissue. Second, classical hig ...

    SBIRPhase I2023Department of Energy
  2. Process Engineering Technology for Manufacture of High-Performance Radiation Detection Semiconductor Materials

    Amount: $206,451.00

    C56-03a-273587For national security and non-proliferation missions, there is a need for the development of radiation detectors that simultaneously exhibit good energy resolution, high efficiency, high ...

    SBIRPhase I2023Department of Energy
  3. Widely Tunable III-V Based Epsilon-near-zero tunneling diodes for room-temperature infrared detectors and light sources

    Amount: $847,491.90

    High performance infrared photodetectors and light sources that span infrared wavelengths from 2 to 14 microns and beyond are critical to DoD. At the longer wavelengths these devices demand stringent ...

    STTRPhase II2023Department of Defense Office of the Secretary of Defense
  4. Ultra-Efficient Integrated Photonic Quantum Transceiver for High-Speed Quantum Communications

    Amount: $731,659.00

    Ground-to-satellite and satellite-to-satellite quantum encrypted communications, distributed sensing, and networking demand a disruptive lsquo;on-a-chiprsquo; technology that permits ultra-efficient, ...

    STTRPhase II2022National Aeronautics and Space Administration
  5. III-V Based Epsilon-near-zero tunneling diodes for room-temperature infrared detectors and light sources

    Amount: $248,631.75

    A critical SWAP-C requirement for future IR systems is the ability to operate at room temperature (RT). While some IR devices such as microbolometers operate at RT, their speed and detectivity is comp ...

    STTRPhase I2022Department of Defense Office of the Secretary of Defense
  6. Autonomous, power and cost efficient, high speed, trace gas measurement system

    Amount: $249,800.00

    Determination of gas concentrations and isotopologue ratios are a critical tool in plant, microbial and ecosystem ecology, hydrology, biogeochemistry studies, and interrogation of environmental remedi ...

    SBIRPhase I2021Department of Energy
  7. Resonant Cavity Enhanced Photodetector for Quantum Information Science Systems

    Amount: $199,999.00

    This proposal addresses the need for advancements in solid state detector technologies for use in quantum information science systems. In particular, there is a need for the development of novel photo ...

    SBIRPhase I2021Department of Energy
  8. Radiation-tolerant C-band Detectors for Free Space Optical Communications

    Amount: $124,749.00

    InGaAs photodiodes are widely available and are the standard detectors for optical telecommunication systems operating at 1300nm and 1550nm wavelengths. They are high performance detectors in ground-b ...

    SBIRPhase I2021National Aeronautics and Space Administration
  9. Investigations of the Graphene/Bismuth Chalcogenide Heterointerface Engineering: A Low-Cost Approach for MWIR and LWIR High Temperature Infrared Detectors

    Amount: $111,498.10

    This proposal seeks to address the need for improved performance in infrared imaging systems by developing an unconventional infrared detector technology. We seek to demonstrate performance improvemen ...

    SBIRPhase I2021Department of Defense Army
  10. Manufacturable, High-Speed, MWIR and LWIR Detectors with Bias-Controllable Internal Gain

    Amount: $166,499.00

    Linear mode avalanche photodiodes (APDs) will be developed in III-V materials epitaxially grown on commercially available GaSb substrates. The detectors will have bias-controllable internal current ga ...

    STTRPhase I2021Department of Defense Army
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