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Company Information:

Company Name:
Amethyst Research Incorporated
Address:
123 Case Circle
Ardmore, OK 73401-0643
Phone:
(405) 227-9414
URL:
EIN:
562472936
DUNS:
159048698
Number of Employees:
14
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,187,310.00 10
SBIR Phase II $4,228,181.00 5
STTR Phase I $674,713.00 6
STTR Phase II $999,999.00 1

Award List:

Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$119,531.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Weiliang Xu, Senior Research Scientist
Abstract:
For reasons primarily related to a lack of a suitable lattice matched substrate and the need to integrate with Si ROIC's, there is a need for delivery of low defect density HgCdTe epilayers on Si. Despite the significant lattice mismatch between Si and HgCdTe several US companies have demonstrated… More

Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Award Year / Program / Phase:
2005 / SBIR / Phase II
Award Amount:
$729,958.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Ronald Hellmer, Senior Research Scientist
Abstract:
Production of low cost, large format HgCdTe LWIR focal plane arrays (FPAs) requires delivery of low defect density HgCdTe epilayers on Si. Despite the significant lattice mismatch between Si and HgCdTe several companies have demonstrated high performance MBE grown MWIR (3-5 microns)-HgCdTe devices… More

SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,963.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop a new passivation technique, derived from a recent discovery that semiconductors can be readily hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet light. The technique has a number of advantages over… More

Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane Arrays

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,894.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Wayne Holland, Senior Research Scientist
Abstract:
HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavelength to very long wavelength infrared (VLWIR); however, its use in VLWIR (12-16 microns)… More

SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$499,901.00
Agency:
NSF
Principal Investigator:
Abstract:
This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon-Assisted Hydrogenation (PAH) causes the substrate to be hydrogenated by simultaneous exposure to… More

Passivation Technologies for Improved Operability in HgCdTe Focal Plane Arrays

Award Year / Program / Phase:
2008 / SBIR / Phase II
Award Amount:
$998,574.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Wayne Holland, Senior Research Scientist
Abstract:
High-performance infrared detectors are mission-critical components of each layer of the Ballistic Missile Defense System. MDA is investing heavily in technologies that enhance producibility/operability of LWIR/VLWIR infrared focal plane arrays (FPAs), and reduce BMDS life cycle costs. HgCdTe is… More

Defect Mapping of Wafers for Increasing Yield and Operability of Infrared Focal Plane Arrays

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,647.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Wayne Holland, Senior Research Scientist
Abstract:
The yield and operability of high performance infrared detectors, particularly those based on HgCdTe, are severely compromised by materials defects. Recently, ARI has demonstrated during its UV hydrogenation process that deuterium effectively 'decorates' defects in materials such as ZnCdTe and… More

SBIR Phase I: Hydrogen Passivation of As-Grown Defects in CdZnTe for Improved Gamma Detection

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,336.00
Agency:
NSF
Principal Investigator:
Abstract:
This SBIR Phase I research project is to improve the performance of CdZnTe based gamma ray detectors by passivating as grown defects through a hydrogenization process. These defects are a source of leakage current and contribute to the backgound noise of the detectors. Successful completion of… More

Defect Mapping of Wafers for Increasing Yield and Operability of Infrared Focal Plane Arrays

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$999,750.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Wayne Holland, Senior Research Scientist
Abstract:
Yields and operability of high performance infrared focal plane arrays (IRFPAs), particularly those fabricated in HgCdTe, are severely impacted by material defects introduced during growth and/or processing. Amethyst Wafer Mapping (AWM) is a materials characterization technology which when fully… More

Minority Carrier Lifetime Measurements in Strained Layer Superlattices

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$99,979.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Daniel Johnstone, Senior Research Scientist
Research Institution:
Texas State University
RI Contact:
Thomas H. Myers
Abstract:
Type II strained layer superlattice (SLS) p-n diode arrays fabricated on domestic-source GaSb substrates are a promising route to meet the critical need within DoD for large area, large format array infrared detectors. However, current SLS material quality is limiting detector performance. A… More

Epitaxially Passivated, Near-Planar Technology for Strained Layer Superlattice Mid- and Long-wave Focal Plane Arrays

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$69,772.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Ryan Cottier, Research Scientist
Abstract:
The InAs/InGaSb Strained Layer Superlattice (SLS) system is developing rapidly and is now finally poised to seriously challenge HgCdTe as the dominant technology for mid- and long-wave detection. SLS structures have a number of practical and theoretical advantages over HgCdTe materials, including… More

SBIR Phase I: Advanced Infrared Imagers Constructed of Lead-Salts

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$149,168.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop device structures for infrared sensor applications using lead chalcogenides. This system has reduced cooling requirements over other high performance infrared materials (such as HgCdTe) resulting from their reduced Auger… More

The Use of Hydrogen for Defect Reduction in Large Format Infrared Detector Materials

Award Year / Program / Phase:
2011 / STTR / Phase I
Award Amount:
$149,842.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Ryan Cottier, Research Scientist – (580) 229-7109
Research Institution:
Northeastern University
RI Contact:
Katherine Ziemer
Abstract:
Active defects negatively impact the performance of IRFPAs by increasing noise at various levels up to, and including, catastrophic degradation. Evidence indicates that"killer defects"are related to the interaction of open core screw dislocations with impurities that remain after… More

High Operability HgCdTe Focal Plane Arrays on Si by Mitigation of Defects

Award Year / Program / Phase:
2011 / STTR / Phase I
Award Amount:
$99,981.00
Agency / Branch:
DOD / MDA
Principal Investigator:
John Dinan, Senior Research Scientist – (703) 360-3872
Research Institution:
Texas State University
RI Contact:
Thomas Myers
Abstract:
For HgCdTe infrared focal plane arrays fabricated on Si substrates, a model has recently been proposed to account for the disparity between the density of failed pixels and the density of dislocations that are present in the HgCdTe junction region. The model distinguishes between active and inactive… More

Defect Reduction at the Silicon (112) Wafer Surface by Amorphization and Recrystallization

Award Year / Program / Phase:
2011 / STTR / Phase I
Award Amount:
$99,912.00
Agency / Branch:
DOD / MDA
Principal Investigator:
John Dinan, Senior Research Scientist – (703) 360-3872
Research Institution:
Texas State University
RI Contact:
Thomas Myers
Abstract:
Silicon wafers oriented on (112) are the preferred substrates for deposition of mercury cadmium telluride layers by molecular beam epitaxy. Surface defects introduced during polishing of the wafers degrade the quality of the epitaxy and the performance of infrared detectors fabricated within these… More

Defect Passivation for Improved Material Properties in Ga-free and Ga-based SLS

Award Year / Program / Phase:
2012 / STTR / Phase I
Award Amount:
$99,999.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Orin W. Holland, Senior Research Scientist – (580) 226-2751
Research Institution:
University Multispectral Labs
RI Contact:
David Brown
Abstract:
A collaboration between Amethyst Research Inc., University Multispectral Laboratories (a government-owned, contractor-operated nonprofit corporation), and Teledyne Imaging Systems (a large defense contractor) proposes to develop/improve high-performance infrared sensors based on Type II,… More

The Use of Hydrogen for Defect Reduction in Large Format Infrared Detector Materials

Award Year / Program / Phase:
2012 / STTR / Phase II
Award Amount:
$999,999.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Ryan Cottier, Research Scientist – (580) 229-7109
Research Institution:
Northeastern University*
RI Contact:
Katherine Ziemer
Abstract:
In Phase I we demonstrated a novel in-situ cleaning technique based on UV-activated surface reactions involving ozone and hydrogen to remove organic adsorbates and chemically-bonded impurities, e.g oxides, from the substrate surface. In Phase II the program will develop this process to… More

Low Dark Current, Extended Wavelength SWIR Sensors Using Hydrogenated nBn InGaAs

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DOD
Principal Investigator:
Ryan J. Cottier, Research Scientist – (580) 229-7109
Abstract:
Improved performance SWIR sensors with extended wavelength response to 2.5 microns will be developed using two disruptive technologies with which Amethyst has demonstrated success: nBn detector structures and defect passivation via hydrogenation. Similar to conventional extended wavelength… More

ULTRA-HIGH PERFOMANCE SOLID-STATE REFRIGERATION USING II-VI LOW DIMENSIONAL STRUCTURE

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$149,999.00
Agency:
DOD
Principal Investigator:
Weerasinghe Priyantha, Research Scientist – (580) 657-2575
Abstract:
ABSTRACT: This program targets development of a high-performance thermoelectric (TE) cooler with a figure-of-merit, ZT>3, which greatly exceeds currently available technology. The cooler is fabricated using Group II-VI compound semiconductors, i.e. HgCdSe or HgCdTe, using a low dimensional… More

Detectors with Improved Near-to-Mid IR Performance and Reduced Cooling Requirements

Award Year / Program / Phase:
2013 / STTR / Phase I
Award Amount:
$125,000.00
Agency:
NASA
Principal Investigator:
Orin W. Holland, Senior Scientist
Research Institution:
University of Oklahoma
RI Contact:
Andrea Deaton
Abstract:
This STTR Phase I proposal addresses a NASA need for improved near-to-mid IR detectors for imaging and spectroscopy. High performance IR detectors with cutoff wavelengths in the range of 2.5?5.0 microns will be developed using InGaAs / AlAsSb semiconductor materials. The proposal uses a two-pronged… More

Development of a Novel IR Detector for Improved CO2 Subsurface Sequestration Monitoring

Award Year / Program / Phase:
2014 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DOE
Principal Investigator:
Abstract:
Low cost and accurate monitoring of sequestered gases such as CO2 is critical to insure that sequestered gases are not reentering the atmosphere. Management requires, in part, improved atmospheric and ground monitoring of greenhouse gases through sensors capable of measuring the flux,… More

Low Dark Current, Extended Wavelength SWIR Sensors Using Hydrogenated Unipolar Barrier InGaAs

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$999,998.00
Agency / Branch:
DOD / SOCOM
Principal Investigator:
M. D. Aragon, PM – (580) 657-2575
Abstract:
In this Phase II program, improved performance SWIR sensors with extended wavelength response to 2.5 microns will be developed using two disruptive technologies, which Amethyst has successfully demonstrated in the Phase I program: unipolar barrier (e.g., nBn) detector structures, and defect… More