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Company Information:

Company Name: United Silicon Carbide, Inc
City: Monmouth Junction
State: NJ
Zip+4: -
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phone: (732) 565-9500

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $2,601,597.00 27
SBIR Phase II $10,147,315.00 16
STTR Phase I $99,980.00 1

Award List:

Quasi-Unipolar High Performance 4H-SiC Diodes for Motor Control Application

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Maurice Weiner
Award Amount: $118,825.00
Abstract:
Not Available The objective of this Phase I proposal is to develop carbon nanotube composites for use in demanding electronic applications on Navy aircraft and ships. Foster-Miller proposes to meet this objective by developing an innovative conductive gap treatment system for stealth aircraft. To… More

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Maurice Weiner, Vice President
Award Amount: $99,000.00

Quasi-Unipolar High Performance 4H-SiC Diodes for Motor Control Application

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Maurice Weiner
Award Amount: $730,000.00

Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

Award Year / Program / Phase: 2001 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Maurice Weiner, Vice President
Award Amount: $150,000.00
Abstract:
We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility has been firmly demonstrated in Phase I. The innovativeprocess technology and the novel SiC VJFET… More

Development of a High Performance SiC-Based Inverter for Motor Control Applications

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: John Carter, Senior Research Engineer
Award Amount: $0.00
Abstract:
Based on the successful Phase I development of a SiC inverter for motor control in Phase I, we propose to perform the major R&D work in Phase II and commercialization development in Phase III for an all-SiC inverter capable of high temperature, high powerand high speed control of three phase ac… More

Development of a High Performance SiC-Based Inverter for Motor Control Applications

Award Year / Program / Phase: 2001 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: John Carter, Senior Research Engineer
Award Amount: $375,000.00
Abstract:
Based on the successful Phase I development of a SiC inverter for motor control in Phase I, we propose to perform the major R&D work in Phase II and commercialization development in Phase III for an all-SiC inverter capable of high temperature, high powerand high speed control of three phase ac… More

Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Maurice Weiner, Vice President
Award Amount: $0.00
Abstract:
We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility has been firmly demonstrated in Phase I. The innovativeprocess technology and the novel SiC VJFET… More

Design and Fabrication of An Advanced SiC SIT for High Power Transmitter

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $100,000.00
Abstract:
In response to Air Force SBIR Topic No. AF01-222, we propose to designand fabricate advanced SiC SITs based on advanced SiC process technology.The advanced design is expected to lead to (i) substantially reducedcomplexity in the process and fabrication of SiC SITs, both in criticalalignment… More

Design and Fabrication of a Novel SiC Power Device

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Peter Alexandrov, Research Engineer
Award Amount: $120,000.00
Abstract:
We propose to design, fabricate, and commercialize a novel SiC power device for high temperature and high power applications. The proposed device does not reply on a future solution to the problem of gate dielectric reliability at high temperature andelectric field. Successful demonstration of the… More

Design and Fabrication of an Advanced SiC SIT for High Power Transmitter

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Maurice Weiner, Vice President
Award Amount: $750,000.00
Abstract:
We propose to fully develop the innovative static induction transistor based on our successful feasibility demonstration performed in Phase I. The innovative process technology and the novel SIT design will make it possible (i) to achieve normally-off RFSITs, (ii) to substantially improve RF SIT's… More

Design and Fabrication of a Novel SiC Power Device

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $730,000.00
Abstract:
Based on the successful device feasibility demonstration in Phase I, we propose to improve the design and fabrication technology and fully develop the novel SiC devices for high temperature and high power switching applications at frequencies up to 100kHz. The novel SiC devices promise to… More

Advanced High Current and Voltage SiC Diodes for Power Switching

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $100,000.00
Abstract:
"We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and (iii) drastically improved power efficiency and enhancedradiation tolerance. In Phase I, we propose… More

An Advanced SiC Power Switch for Deep Space Power Systems

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency: NASA
Principal Investigator: Petre Alexandrov
Award Amount: $70,000.00
Abstract:
We propose to design and fabricate advanced SiC power switch aimed at up to several kilowatt power system applications. The power switch is expected to lead to (i) substantially reduced volume and weight of space power systems, (ii) greatly expanded operating temperature range, and (iii) drastically… More

A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Leonid Fursin, Senior Research Engineer
Award Amount: $120,000.00
Abstract:
In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach can lead to (i) substantially higher heat rejection, (ii) drasticallysimplified packaging technology, and (iii) greatly… More

An Advanced SiC Power Switch for Deep Space Power Systems

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency: NASA
Principal Investigator: Petre Alexandrov, Principal Investigator
Award Amount: $600,000.00
Abstract:
We propose to design and fabricate advanced SiC power switch aimed at up to several kilowatt power system applications. The power switch is expected to lead to (i) substantially reduced volume and weight of space power systems, (ii) greatly expanded operating temperature range, and (iii) drastically… More

Advanced High Current and Voltage SiC Diodes for Power Switching

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / OSD
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $750,000.00
Abstract:
We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and (iii) drastically improved power efficiency and enhanced radiation tolerance. We propose to compare… More

A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Leonid Fursin, Senior Research Engineer
Award Amount: $730,000.00
Abstract:
In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach is aimed at achieving (i) substantially higher heat rejection, (ii) drastically simplified packaging technology, (iii)… More

SiC Power Converter

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $69,887.00
Abstract:
We propose to develop SiC based power converter technology up to 60kW suitable for compact high power density and high temperature AGS and other commercial applications. In Phase I, we shall concentrate on (i) packaging and characterizing high power SiC switches so that the circuit-level model can… More

Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency: NASA
Principal Investigator: George Lin, Principal Investigator
Award Amount: $70,000.00
Abstract:
This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single photon sensing. The detector design and advanced processing technologies combined with the unique material property of 4H-SiC are expected… More

SBIR Phase II: Development of High Performance Ultraviolet Single Photon Detectors

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency: NSF
Principal Investigator: Petre Alexandrov, Mr
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase II research project aims to carry out the major R&D work to fully develop a 4H-SiC Single Photon Avalanche Detectors (SPADs) capable of ultra-sensitive and reliable room temperature single photon counting in the ultraviolet (UV) range with high… More

A highly manufacturable technology for radiation-hardened and high-temperature system applications

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Leonid Fursin, Senior Research Engineer
Award Amount: $100,000.00
Abstract:
This SBIR Phase I project is proposed to develop a highly manufacturable technology for radiation-hardened high-temperature SiC devices for both military and commercial applications. The innovative design in device structure and in processing of the proposed SiC power device will make it possible to… More

High Temperature, High Power Density Electronic Devices

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Xueqing Li, Senior Research Engineer
Award Amount: $70,000.00
Abstract:
This SBIR project is proposed to develop a high-temperature and high power density power system based on SiC power modules. The entire system will be designed to operate up to 120C ~ 150C ambient temperature without active cooling and the SiC power modules will be developed for operations at even… More

Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency: NASA
Principal Investigator: Leonid Fursin
Award Amount: $600,000.00
Abstract:
This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra low noise photon counting. The detector design and advanced processing technologies combined with the unique material property of 4H-SiC… More

SBIR Phase II: Development of High Performance Ultraviolet Single Photon Detectors

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency: NSF
Principal Investigator: Petre Alexandrov, Mr
Award Amount: $500,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase II research project aims to carry out the major R&D work to fully develop a 4H-SiC Single Photon Avalanche Detectors (SPADs) capable of ultra-sensitive and reliable room temperature single photon counting in the ultraviolet (UV) range with high… More

Reliable, High Temperature Silicon Carbide MOSFET

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: X. L. Li, Sr. Research Engineer
Award Amount: $70,000.00
Abstract:
In response to SBIR topic A05-236, a proposal based on a novel concept in MOSFET design and fabrication is proposed to address the problems of (i) low channel mobility, (iii) low and unstable threshold voltage, and (iii) low gate oxide reliability under both high electric field and high temperature.… More

A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Leonid Fursin, Sr. Research Engineer
Award Amount: $100,000.00
Abstract:
In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suitable for auto-processing, is proposed to address the problems of (i) the mechanical stress induced… More

SiC Power Converter

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Petre Alexandrov, Sr. Research Enginner
Award Amount: $325,000.00
Abstract:
This SBIR Phase II program is aimed at developing SiC based power converter technology up to 30kW and 50 kHz suitable for compact high power density and high temperature advanced gun system (AGS) and other DOD systems as well as commercial applications. In Phase II, efforts will be concentrated on… More

Reliable, High Temperature Silicon Carbide MOSFET

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: X. Larry Li, Sr. Research Engineer
Award Amount: $729,999.00
Abstract:
This SBIR Phase II program, in response to topic number A05-236, aims at design and fabrication of a novel SiC power MOSFET to address the problems of (i) low channel mobility, (iii) low and unstable threshold voltage, and (iii) low gate oxide reliability under both high electric field and high… More

A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency / Branch: DOD / OSD
Principal Investigator: Leonid Fursin, Director of Technology
Award Amount: $750,000.00
Abstract:
In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suitable for auto-processing, is proposed to address the problems of (i) the mechanical stress induced… More

SBIR Phase I: Smart SiC DC-DC Power Converter for HEV

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: NSF
Principal Investigator: Leonid G. Fursin, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I research project aims for feasibility demonstration of the first Power Integrated Circuit based on a very unique design of Silicon Carbide (SiC) high-voltage lateral Junction gate Field-Effect Transistor (HV-LJFET), which promises to overcome… More

SBIR Phase I: Development of the First SiC PEBB

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency: NSF
Principal Investigator: Leonid G. Fursin, PhD
Award Amount: $100,000.00
Abstract:
This SBIR Phase I research project is to develop and commercialize the first silicon carbide monolithically integrated Power Electronic Building Block (PEBB). The proposed PEBB integrates a Vertical Junction gate Field Effect Transistor (VJFET) and a Junction Barrier Schottky (JBS) diode on the same… More

Optically Gated, Silicon Carbide Semiconductors for Aircraft Electrical Actuator Motor Drives

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Petre Alexandrov, Principal Investigator
Award Amount: $100,000.00
Abstract:
We propose an optically controlled power switch based on 4H-SiC TI-VJFETs for applications in EHA and EMA actuator motor drives for air platforms. It comprises a UV LED light source driver, an integrated gate buffer driver and a high power 4H-SiC TI-VJFETs as power switch. The UV LED light source… More

High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Leonid Fursin, Sr. Research Engineer
Award Amount: $100,000.00
Abstract:
In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing the development of 4H-SiC power switches for resonant high-frequency power converter in radar… More

Development for Radiation Hardened Advanced Electronic Circuits

Award Year / Program / Phase: 2010 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: Rutgers University
Principal Investigator: Larry X. Li, Sr. Engineer
Award Amount: $99,980.00
RI Contact: Charles Wyckoff
Abstract:
In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based on a novel yet simple design SiC transistor that has the potential to provide a factor of 10X… More

High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Leonid Fursin, Sr. Engineer
Award Amount: $699,000.00
Abstract:
In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing the development of 4H-SiC power switches for resonant high-frequency power converter in radar… More

High Temperature Silicon Carbide (SiC) Gate Driver

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Petre Alexandrov, Senior Research Engineer
Award Amount: $69,952.00
Abstract:
Various harsh environment applications, such as the propulsion systems of Hybrid Electrical Vehicles (HEV), space systems, and energy exploration applications, require compact and efficient electrical power systems with reduced cooling requirements. Power modules based on Silicon Carbide (SiC) are… More

High Temperature Smart Sensor for Downhole Logging and Monitoring

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: DOE
Principal Investigator: Petre Alexandrov, Dr.
Award Amount: $100,000.00
Abstract:
High-temperature smart sensors are desired for use in various harsh environment applications. Placing the sensing circuit close to the actual sensor would substantially reduce noise and interference problems and improve system reliability. If the circuits can operate at high temperature, this will… More

High Temperature Smart Sensor for Downhole Logging and Monitoring

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: DOE
Principal Investigator: Petre Alexandrov, Dr.
Award Amount: $999,473.00
Abstract:
High-temperature smart sensors are desired for use in various harsh environment applications. Placing the sensing circuit close to the actual sensor would substantially reduce noise and interference problems and improve system reliability. If the circuits can operate at high temperature, this will… More

The First Monolithic Silicon Carbide Active Pixel Sensor Array for Solar Blind UV Detection

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: NASA
Principal Investigator: Leonid Fursin, Principal Investigator
Award Amount: $124,707.00
Abstract:
This Small Business Innovation Research Phase I project will address the needs of space astronomy, military threat detection, and scientific research for image sensors that are sensitive in the ultraviolet while insensitive in the visible spectrum. This is because solar illuminated backgrounds are… More

6.5 kV Silicon Carbide Half-Bridge Power Switch Module for Energy Storage System Applications

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOE
Principal Investigator: John Hostetler, Dr. – 732-355-0550
Award Amount: $149,854.00
Abstract:
As renewable resources such as wind and solar start to penetrate the electrical infrastructure, the transient nature of these resources requires energy storage systems to buffer the fluctuations in output. Power conversion systems in the 100 to 200 kW regime are sought to address needs on the… More

Silicon Carbide Device Model Development for Circuit Simulations

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Petre Alexandrov, Senior Research Engineer – (732) 355-0550
Award Amount: $149,658.00
Abstract:
During this program, United Silicon Carbide, Inc. (USCi) will develop compact SiC power device models, prepare them for industry acceptance, and gain support of the models from commercial simulator suppliers. In Phase I, we propose to develop an initial compact circuit model for a 4H-SiC power… More

High Temperature Silicon Carbide (SiC) Gate Driver

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: DOD
Principal Investigator: Petre Alexandrov, Senior Research Engineer – (732) 355-0550
Award Amount: $728,843.00
Abstract:
During Phase I, USCI developed a compact, high frequency, high temperature, silicon carbide (SiC) gate driver module to control SiC transistor power modules, capable of operation in the temperature range from -40 degrees C to 300 degrees C, based on our innovative 4H-SiC Lateral Junction Field… More

15 kV GTO Thyristor Module for Use in Small, Highly Efficient Current Source Inverters Utilizing AC-LinkTM Technology

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOE
Principal Investigator: John Hostetler, Dr.
Award Amount: $149,911.00
Abstract:
Renewable energy resources are being adopted by government entities, utility power providers and more recently by industrial behind-the-meter end-users as well. Solar power is attractive especially in areas where electricity costs are high, such as California and New Jersey. New Jersey is… More

Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Peter Alexandrov, Senior Research Engineer – (732) 355-0550
Award Amount: $149,803.00
Abstract:
ABSTRACT: During this program, United Silicon Carbide, Inc. (USCi) will develop basic analog and digital circuit blocks capable of operation up to 500oC, based on 4H-SiC complementary lateral JFET technology. The following integrated circuits will be designed (i) operational amplifier; (ii) voltage… More