FOCUSED ION IMPLANTATION FOR OPTOELECTRONIC CIRCUITS

THE INTENT OF THIS PROGRAM IS TO DEVELOP, TEST, AND EVALUATE THE USE OF FOCUSED ION BEAMS FOR THE PURPOSE OF FABRICATING, THROUGH IN SITU MATERIALS MODIFICATION, THE NECESSARY DIMENSIONAL ELEMENTS FOUND IN OPTOELECTRONIC CIRCUITS. SUCH ELEMENTS WOULD CONSIST OF MONOLITHICALLY INTEGRATED SOLID STATE SOURCE LASERS, OPTICAL SIGNAL HANDLING ELEMENTS SUCH AS BEAM SPLITTERS, COUPLERS, AND WAVEGUIDES, AS WELL AS OPTOELECTRONIC DETECTOR ELEMENTS. FOCUSED ION BEAMS USED DIRECTLY, OR IN THE PRESENCE OF REACTIVE GASES AND IN COMBINATION WITH OTHER PLANAR DEPOSITION TECHNIQUES HAVE THE POTENTIAL FOR SIGNIFICANT ADVANCES IN THE PROCESSING AND FABRICATION TECHNOLOGY OF OPTOELECTRONIC CIRCUITS THROUGH THE PRECISE BEAM WRITING CAPABILITIES THAT IT REPRESENTS.