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Advanced CHFET with GaN Insulator

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 28176
Amount: $80,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1995
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
661 5th Avenue North, Ste 160
Minneapolis, MN 55405
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Timothy T. Childs
 (612) 341-2795
Business Contact
Phone: () -
Research Institution
N/A
Abstract

TLC Precision Wafer Technology, Inc. (TLC) has a very aggressive plan for becoming a leading manufacturer and supplier of epitaxial GaAs and InP-based wafers for military and commercial applications. Key to our strategy is to identify, develop, and be the first at market with those advanced semiconductor materials that offer clear cost and performance advantages for high speed/low power applications. We strongly believe that the complementary GaAs heterostructure field effect transistor (CHFET) technology is such a materials system. Even though recent progress has been made toward LSI circuit levels, materials/device issues must be further optimized to realize the full potential of this technology. The key issues to optimize are (i) threshold voltage control for both the n- and p-channel FETs, (ii) increased p-channel FET transconductance and, (iii) reduced gate leakage of the FETs. Of the three issues stated above, only the gate leakage issue can not be optimized with the current structure. The "insulating" Al(sub0.75)Ga(sub0.25)As layer can not be made any more resistive under the current growth conditions. TLC has detailed plans for modifying the standard CHFET structure by replacing the Al(sub0.75)Ga(sub0.25)As layer with an MBE-grown GaN layer which has intrinsically greater insulating properties.

* Information listed above is at the time of submission. *

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