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Non-contact lithography based on optical superlensing at 193 nm

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-08-C-0188
Agency Tracking Number: 07SB2-0421
Amount: $98,979.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB072-028
Solicitation Number: 2007.2
Timeline
Solicitation Year: 2007
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-04-30
Award End Date (Contract End Date): 2008-09-17
Small Business Information
825 S. Myrtle Ave.
Monrovia, CA 91016
United States
DUNS: 195754056
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ravi Verma
 Scientist
 (626) 471-9700
 ravi.verma@tanner.com
Business Contact
 Kevin Dinniene
Title: Controller
Phone: (626) 471-9778
Email: kevin@tanner.com
Research Institution
N/A
Abstract

We are proposing the development of a “negative-index” material at 193 nm for use as a “superlens” for high resolution lithography. Superlensing has already been demonstrated at 365 nm, and this work will simply extend the demonstrated principles to 193 nm with a new set of materials.In Phase I, we will demonstrate this superlens with 30 nm half-pitch features, while restricting ourselves to a contact mask. In Phase II, we will extend the scheme to non-contact lithography based on superlensing at 193 nm.

* Information listed above is at the time of submission. *

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