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AlInGaN-based Transistors for Advanced Applications
Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-05-C-0073
Agency Tracking Number: A043-048-1290
Amount:
$119,784.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
A04-048
Solicitation Number:
2004.3
Timeline
Solicitation Year:
2004
Award Year:
2005
Award Start Date (Proposal Award Date):
2004-12-17
Award End Date (Contract End Date):
2005-06-17
Small Business Information
7620 Executive Drive
Eden Prairie, MN
55344
United States
DUNS:
876868647
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
Yes
Principal Investigator
Name: Andrei Osinsky
Title: Manager of Device Development
Phone: (952) 934-2100
Email: osinsky@svta.com
Title: Manager of Device Development
Phone: (952) 934-2100
Email: osinsky@svta.com
Business Contact
Name: Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
N/A
Abstract
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.
* Information listed above is at the time of submission. *
