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SBIR Phase I: High Sensitivity, Tunable GaN/AlGaN Multiple Quantum Well UV Photodetectors

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 0215236
Amount: $99,979.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7620 Executive Drive
Eden Pairie, MN 55344
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Amir Dabiran
 (952) 934-2100
 dabiran@svta.com
Business Contact
Phone: () -
Research Institution
N/A
Abstract

This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of highly sensitive, solid-state, solar-blind photodiodes based on the group III-nitride material system, aluminum gallium nitride. Ultraviolet detectors are used in water treatment plants, automated arc-welding systems, and the monitoring of atmospheric ozone depletion. The objective of the proposed project is to develop tunable, high efficiency, Gallium Arsenide Nitride/ aluminum gallium nitride multiple quantum well UV photodiodes utilizing sequential resonant tunneling to enhance carrier collection efficiency and detector response time.

The multiple quantum well detectors will improve the characteristics of nitride detectors specifically in the solar blind wavelength region. Significant commercial interest has been expressed in this wavelength region for flame detection, ultraviolet photolithography, space and military applications include missile detection.

* Information listed above is at the time of submission. *

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