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ULTRA-HIGH ABSORPTION L-VALLEY GASB QUANTUM-WELL INFRARED DETECTORS

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25568
Amount: $59,980.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7620 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Peter Chow, Phd
 (612) 941-1898
Business Contact
Phone: () -
Research Institution
N/A
Abstract

A newly discovered class of normal incidence quantum well (QW) photodetectors is proposed for very long wavelength (14-20 um) infrared detection. The material consists of bandgap engineered GaSb and GaAlSbAs L-valley QW's and its detection is based on interconduction subband transitions. Because exteemely high absorption coefficient (9,100 cm(-1)) is predicted and has been observed, it appears to be a very promising detector material for use in astrophysics, atmospheric remote sensing, and planetary applications. High absorption coefficient is especially desirable for longer wavelength uses. We propose to fabricate this new material by molecular beam epitaxy (MBE). The MBE growth system is equipped with in-situ diagnostics for close process monitoring in order to achieve exact composition control. The QW structure parameters will be determined from theoretical modeling and their infrared properties will be thoroughly investigated.

* Information listed above is at the time of submission. *

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