Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

We propose two novel sources for improved carbon and tellurium dopants in MBE growth for III-V compounds semiconductors where heavy doping is required. The compact carbon source is electron beam heated and has a very fast thermal response. It is expected that increased monatomic carbon species in the flux would improve the dopant behavior. The tellurium source produces ionized species which would increase the dopant incorpration significantly. Very high dopant levels could be achieved with the new sources. The new designs are compatible application to existing MBE systems is possible. The prototype desings will be tested in actual thin film growth to evaluate their effectiveness. The Phase I project is anticipated to lead to improved device performance by providing better dopant behavior. by providing better dopant behavior.