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Low Cost InGaN Device Production and HOVPE Tool

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0224
Agency Tracking Number: 08SB2-0814
Amount: $99,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB082-053
Solicitation Number: 2008.2
Timeline
Solicitation Year: 2008
Award Year: 2009
Award Start Date (Proposal Award Date): 2009-02-05
Award End Date (Contract End Date): 2009-09-30
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ 08854
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Nick Sbrockey
 Senior Scientist
 (732) 302-9274
 sbrockey@structuredmaterials.com
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: GSTompa@structuredmaterials.com
Research Institution
N/A
Abstract

In this SBIR effort, Structured Materials Industries, Inc. www.structuredmaterials.com (SMI) will develop a low-cost production technology, and the commercial tool set, for low cost InGaN devices production. InGaN and the related group III-Nitride semiconductors are important for a range of electronic device applications, spanning LED's, photovoltaics, detectors, and high speed / high power devices. Present production technologies such as MOCVD and MBE are too slow and too expensive for commercial production of all but the most high-end products. This project will develop a scalable production HVPE/OMVPE hybrid tool for InGaN and related materials, capable of low cost and high volume device production. In Phase I, we will demonstrate technical feasibility of the HVPE/OMVPE hybrid concept. In Phase II, we will reduce the concept to practice and build a prototype HVPE/OMVPE hybrid reactor. We will also demonstrate the capabilities in Phase II, by producing InGaN based devices – nominally a photovoltaic and a quantum well LED.

* Information listed above is at the time of submission. *

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