USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name:
Sinmat Inc
Address:
1912 NW 67th Place
Gainesville, FL 32653-1649
Phone:
(352) 334-7237
URL:
EIN:
593645729
DUNS:
24935517
Number of Employees:
20
Woman-Owned?:
Yes
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $2,227,186.00 21
SBIR Phase II $6,594,921.00 9
STTR Phase I $569,987.00 6
STTR Phase II $2,249,964.00 3

Award List:

Deep Ultra Violet (DUV) Diamond Based Light Emitting Diodes (02-214B)

Award Year / Program / Phase:
2002 / STTR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Deepika Singh, President
Research Institution:
University of Florida
RI Contact:
Steve Pearton
Abstract:
Sinmat Inc. working with University of Florida, proposes to develop an economical and scalable process for fabrication of diamond light emitting diodes (LEDs) that operate in the deep ultraviolet regime. These LEDs are expected to have significant usage inBMDO related activities as compact sources… More

Gentle and Non-Contact Slurries for Atomic Scale Chemical Mechanical Smoothening and Passivation of GaSb Substrates

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$98,868.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Deepika Singh, President
Abstract:
"Gallium Antimonide based hetrostructures have attracted significant interest in recent years because of their applications ranging from 100 GHz high speed logic circuits. For rapid commercialization of these devices, it is necessary to obtain, highsurface quality, surface passivated GaSb… More

Novel Particulate Fluidization Systems for Pulmonary Drug Delivery Applications

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$99,992.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research project proposes to develop novel fluidization systems that are needed for synthesis of nano-encapsulated insulin particles for pulmonary drug delivery applications. By coating the insulin particle with very thin (10-50 nm) layer of biodegradable polymers… More

Hybrid Chemical Vapor Deposition (HCVD) for Synthesis of Copper and Silver Interconnects

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$99,948.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will synthesize semiconductor interconnects by using a novel chemical vapor deposition technique for deposition of silver and copper films on high aspect ratio patterned substrates for sub 100 nm CMOS devices. This technique called… More

SBIR Phase I: Nanoporous Silica Slurry Technology for Enhanced Chemical Mechanical Planarization (CMP) of Low "k" Dielectrics

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$99,938.00
Agency:
NSF
Principal Investigator:
Deepika Singh
Abstract:
The Small Business Innovation Research (SBIR) Phase I project will synthesize novel slurries for chemical mechanical planarization (CMP) of low dielectric constant (K) materials. Standard abrasives such as silica and alumina lead to significant scratching, indenting and delamination of the… More

SBIR Phase I: High Discharge Rate Rechargeable Lithium Batteries Based on Novel Cathode Materials

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$99,980.00
Agency:
NSF
Principal Investigator:
Deepika Singh
Abstract:
The Small Business Innovation Research (SBIR) Phase I project focuses on the development of novel lithium based cathode materials for high discharge rate applications. Significant attempts have been made in the past decade to commercialize lithium manganospinels but have met with limited success… More

SBIR Phase II: Nanoporous Silica Slurries for Enhanced Chemical Mechanical Planarization (CMP) of Low k Dielectrics

Award Year / Program / Phase:
2004 / SBIR / Phase II
Award Amount:
$499,980.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase II project aims to develop unique chemical mechanical planarization (CMP) slurries based on nanoporous silica particles that will meet or exceed CMP needs of low k dielectrics for the 80 nm and beyond semiconductor manufacturing nodes. The integration… More

Nanoporous Silica Slurry for Enhanced CMP of Low Power Consumption Copper Interconnects

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,843.00
Agency:
DOE
Principal Investigator:
Abstract:
79522S In the manufacture of semiconductor interconnects, the copper Chemical Mechanical Planarization (CMP) process uses a slurry composed of large, hard particles that cause defects such as scratches, and delamination of the copper film from the low- k-dielectric-constant matter. To overcome… More

Rapid,Single Atomic Step Mechano-chemical Polishing (MCP) of Silicon Carbide Wafers

Award Year / Program / Phase:
2005 / STTR / Phase I
Award Amount:
$99,999.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Rajiv Singh, Professor
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Rajiv Singh
Abstract:
Presently one of the outstanding challenges for rapid commercialization of SiC based device technology for high power/high frequency electronics is the affordable, volume production of damage-free, epi-ready 100 mm SiC wafers that exhibit single atomic steps (terraces). Sinmat Inc. in partnership… More

SBIR Phase I: Single Step Chemical Mechanical Planarization of Copper/Ultra low k Interconnects

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,998.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) research project aims to develop a single step chemical mechanical polishing (CMP) process for fabrication of next generation of copper based interconnects that join millions of transistors on a chip. The current state of the art copper CMP process is… More

SBIR Phase I: Gentle Atomic Level Chemical Mechanical Smoothening (CMS) of GaN and SiC Substrates

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,997.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I research project will develop a novel gentle atomic scale surface polishing method for GaN and SiC based wide band-gap materials. This process is based on a chemical mechanical smoothening (CMS) technique, which is a unique subset of the novel… More

SBIR Phase II: Single Step Chemical Mechanical Planarization of Copper/Ultra Low k Interconnects

Award Year / Program / Phase:
2006 / SBIR / Phase II
Award Amount:
$496,673.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project proposes to develop and commercialize a single step chemical mechanical polishing (CMP) process for fabrication of next generation of copper based interconnects that join millions of transistors on a chip. The current state of the art… More

Rapid Atomic Level, Mechano Chemical Polishing of Silicon Carbide Substrates

Award Year / Program / Phase:
2006 / STTR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Rajiv Singh, Professor
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Roslyn Oleson
Abstract:
Currently one of the outstanding challenges is the affordable, volume production of epi-ready, 100 mm SiC wafers that are scratch-free and have atomic-scale surface finish. As SiC is relatively chemically inert and mechanically hard, aggressive polishing methods involving very hard particles have… More

SBIR Phase I: Sustained Pulmonary Release of Nanoencapuslated Proteins for Counter Bioterrorism Applications

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) project focuses of novel method for sustained pulmonary release of protein based antitoxins for counter bioterrorism applications. There is a significant need of therapeutic treatments against bioterrorism agents such as anthrax, cholera, tetanus,… More

SBIR Phase I: Novel Solid State MicroBatteries Based on Embedded Nanostructured Cathodes of Defective Lithium Manganospinels

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project focuses on the development of integrated, high performance thin film batteries for portable devices and stand-alone sensors. The rapid development of high performance Li-Mn-O integrated micro-batteries for sensors/communication… More

SBIR Phase I: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon on Insulator (SOI) Devices

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) project focuses on development of novel high-temperature annealing system for processing for advanced silicon on insulator (SOI) devices. The present rapid thermal annealing (RTA) systems, lead to substantial profile broadening because of their large… More

Novel Rapid and Low Damage Mechanical Polishing Method for Low Cost and Volume Manufacturing of 100mm SiC Substrates

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,976.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Deepika Singh, President
Abstract:
The extremely long and multiple polishing steps represent one of the critical challenges for affordable, volume production of high quality 100 mm SiC wafers. As SiC is relatively chemically inert and mechanically hard, aggressive polishing methods involving very hard particles have been used to… More

SBIR Phase I: Abraisve Free Chemical Mechanical Planarization (AFCMP) Process for Next Generation Copper Interconnects

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This small business innovation research (SBIR) Phase I project proposes the development of a novel abrasive-free recyclable copper CMP (AFCMP) recyclable process based on an unique patented iodine chemistry which leads to the formation of a soft, insoluble copper iodide layer on the surface of the… More

SBIR Phase I: Novel Slurry for Direct Shallow Trench Isolation (STI) Planarization Process for Sub-50 nm Devices

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) project proposes to develop a novel single step shallow trench isolation (STI) planarization. An ideal STI Chemical Mechanical Planarization (CMP) process is expected to be a single step process, which directly and rapidly removes the overburden… More

SBIR Phase II: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon Devices

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$500,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase II project focuses on development of a novel high-temperature system for processing of advanced silicon devices. Currently used rapid thermal processing (RTP) systems result in substantial dopant profile broadening because of their relatively large time… More

SBIR Phase II: Gentle Atomic Level Chemical Mechanical Smoothening (CMS) of Gallium Nitride Substrates

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$499,900.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project will develop and scale-up an industrially robust and low cost chemical mechanical smoothening (CMS) process to produce atomically polished gallium nitride (GaN) on silicon substrates for high power and high frequency applications. As… More

Novel Atomically Smooth Conformal Finishing Method for Ultra-Rapid Removal of Sub-Surface Damage and Stresses in SiC Mirrors

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,998.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Deepika Singh, President and Scientist
Abstract:
Silicon carbide (SiC) has long been recognized as an attractive mirror material due to its superior mechanical and thermal properties when compared to conventional optical materials. However, the extreme mechanical strength results in significant sub-surface damage (SSD) which needs to be removed by… More

Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Rajiv K. Singh, Professor of Mat. Sc. & Eng.
Research Institution:
University of Florida
RI Contact:
Rajiv K. Singh
Abstract:
Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface… More

Low Cost, Scalable Manufacturing of Microlens Engineered Substrates (MLES) for Enhanced Light Extraction in OLED Devices

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,997.00
Agency:
DOE
Principal Investigator:
Research Institution:
University of Florida
RI Contact:
Franky So
Abstract:
Solid state lighting is being promoted as the ultimate lamps of future. Though the internal quantum efficiency of OLED devices is almost 100%, external efficiency is a mere 36% mainly because of poor light out-coupling (~40%) from the device. Improvement in light out-coupling to >70% and further… More

Defect Free, Ultra-Rapid Thinning/Polishing of Diamond Crystal Radiator Targets (20??m) for Highly Linearly Polarized Photon Beams

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,997.00
Agency:
DOE
Principal Investigator:
Research Institution:
University of Connecticut
RI Contact:
Richard Jones
Abstract:
The fabrication of high-quality ultra thin (~20 micron) diamond crystals targets for 9 GeV highly polarized photon beams is an outstanding challenge. Current state of the art polishing/thinning techniques are not successful in thinning single crystal diamond to such dimension because of its extreme… More

Novel Reactive Chemical Mechanical Polishing (RCMP) Technology for fabrication of Large, Non-flat SiC mirrors

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Deepika Singh, President & CEO
Abstract:
Silicon Carbide (SiC) due to its superior thermal and mechanical properties serves as an attractive candidate as mirror material. The manufacturing of such mirrors is a critical challenge because of the hardness and chemical inertness of the material. The current state-of-the-art polishing methods… More

Ultra-Rapid Chemical Mechanical Finishing (UCMF) of SiC Mirrors

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$799,994.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Deepika Singh, President
Abstract:
The overall goal of the Phase II effort is to develop the novel ultra-rapid chemical mechanical finishing (UCMF) process for SiC mirror manufacturing, and commercialize this process in collaboration with existing vendors using existing equipment infrastructure. Unlike glass and metallic systems, the… More

Novel Polishing Process to Fabricate Ultra Low Thickness Variation Diamond Substrates for Next Generation Beam Tracking Detectors

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DOE
Principal Investigator:
Arul C. Arjunan, Dr. – 352-334-7237
Abstract:
Diamond crystals with small total thickness variation (TTV) and local thickness variation (LTV) values are needed for position sensitive fast particle detectors for particle tracking/timing, and detecting direct/indirect beams. The fabrication of ultra-flat, low surface defectivity diamond detectors… More

Low Cost, Scalable Manufacturing of Microlens Engineered Substrates (MLES) for Enhanced Light Extraction in OLED Devices

Award Year / Program / Phase:
2011 / STTR / Phase II
Award Amount:
$749,991.00
Agency:
DOE
Principal Investigator:
Research Institution:
University of Florida
RI Contact:
Abstract:
Solid state lighting is being promoted as the ultimate lamps of future. Though the internal quantum efficiency of OLED devices is almost 100%, external efficiency is a mere 36% mainly because of poor light out-coupling (~40%) from the device. Improvement in light out-coupling to & gt;70% and… More

Defect Free, Ultra-Rapid Thinning/Polishing of Diamond Crystal Radiator Targets (20??m) for Highly Linearly Polarized Photon Beams

Award Year / Program / Phase:
2011 / STTR / Phase II
Award Amount:
$749,973.00
Agency:
DOE
Principal Investigator:
Research Institution:
University of Connecticut
RI Contact:
Abstract:
The fabrication of high-quality ultra thin (~20 micron) diamond crystals targets for 9 GeV highly polarized photon beams is an outstanding challenge. Current state of the art polishing/thinning techniques are not successful in thinning single crystal diamond to such dimension because of its extreme… More

Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$98,658.00
Agency:
DOD
Principal Investigator:
Deepika Singh, President&CEO – (352) 334-7237
Abstract:
As the epi quality of HgCdTe layers is dependent on the quality of silicon surfaces, it is imperative that the (112) Si surfaces be pristine and devoid of defects. Unfortunately, the commercial available (112) Si surfaces are typically poor quality due to the presence of large number of COP (crystal… More

Novel Polishing Process to Fabricate Ultra Low Thickness Variation Diamond Substrates for Next Generation Beam Tracking Detectors

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$999,507.00
Agency:
DOE
Principal Investigator:
Arul Arjunan, Dr. – 352-334-7237
Abstract:
Diamond crystals with small total thickness variation (TTV) and local thickness variation (LTV) values are needed for position sensitive fast particle detectors for particle tracking/timing, and detecting direct/indirect beams. The fabrication of ultra-flat, low surface defectivity diamond detectors… More

Novel Silicon Carbide Epitaxy Process for Dramatic Improvements to Material Characteristics, Cost, and Throughput

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,996.00
Agency:
DOD
Principal Investigator:
Rajiv Singh, Chief Technology Officer – (352) 334-7270
Abstract:
ABSTRACT: Silicon carbide electronics technology has several advantages over conventional silicon electronics and it finds its application in several power electronics applications. However, the manufacturing of reliable SiC power devices is a critical challenge because of the degradation of the… More

Reduced-Cost Grinding and Polishing of Large Sapphire Windows

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$79,994.00
Agency:
DOD
Principal Investigator:
Deepika Singh, President&CEO – (352) 334-7237
Abstract:
Sinmat Inc., in collaboration with Exotic Electro-Optics, Inc. proposes to investigate grinding and polishing of large sapphire windows using slurries based on unique nanoporous silica particles. Due to light transparency and high mechanical hardness and inertness, sapphire window materials find… More

Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

Award Year / Program / Phase:
2013 / STTR / Phase I
Award Amount:
$99,994.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Rajiv Singh, Professor – (352) 334-7270
Research Institution:
University of Florida
RI Contact:
Rajiv Singh
Abstract:
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still… More

Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$1,049,171.00
Agency:
DOD
Principal Investigator:
Deepika Singh, President&CEO – (352) 334-7237
Abstract:
Next generation infra-red focal plane array applications for night vision systems require high quality, large area HgCdTe epi-layers. Such layers are only possible with the use of (112) Si substrates that are of high quality with surfaces that are pristine and devoid of defects. However,… More

Novel Rapid Chemical Mechanical Polishing (CMP) Process for Fabrication of High Performance CVD Diamond Particle Detectors

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$999,704.00
Agency:
DOE
Principal Investigator:
Abstract:
Diamond possesses excellent particle detection characteristics, which makes it indispensible for its use in the radiation hard ultra-fast detectors for high energy physics applications. For such applications, damage free, ultra-smooth chemical vapor deposition diamond substrates of large area are… More

SBIR Phase I: Low Cost Scalable Manufacturing of Patterned Sapphire Substrates (PSS) for High Efficiency LEDs

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project deals with development of a low-cost manufacturing process for high-efficiency patterned sapphire substrates for cheaper and more energy-efficient light emitting diodes (LEDs). Patterned sapphire substrates have been found to improve the… More

Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$749,992.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Arul C. Arjunan, Technology Manager – (352) 334-7270
Abstract:
ABSTRACT: Silicon carbide based power devices has several advantages because it can be used in very high power, high temperature, high frequency applications, where conventional silicon devices cannot be used. Despite significant advancement in SiC semiconductor technology in the past 3 decades,… More