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Sinmat Inc

Company Information
Address
1912 NW 67th Place
Gainesville, FL -
United States


http://www.sinmat.com

Information

UEI: N/A

# of Employees: 20


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No




Success Stories

  1. SBIR-STTR-Success: Sinmat, Inc.

    POWER WASH: Polishing the microchips that power clean-energy technologyAs Earth’s population grows, the global demand for energy is predicted to rise, and with no immediate end in sight. By 2040, the world’s energy consumption will increase by 56 percent, according to a 2013 report by...

Award Charts




Award Listing

  1. Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers

    Amount: $99,999.00

    The low cost manufacturing of high quality, electronic grade single crystal and poly crystal diamond wafer depends on development of scalable, defect reduction growth and polishing methods. Sinmat has ...

    SBIRPhase I2016Department of Defense Army
  2. Novel Ultra-High Rate Finishing Processes for Production of 100 mm Epi-ready GaN Substrates Title on abstract leaves out the word "Novel")

    Amount: $149,997.98

    Current gallium nitride bulk substrate finishing process technology yields poor structural quality of surfaces. The current process takes longer time and results in defective surface. The wafering pro ...

    SBIRPhase I2015Department of Energy
  3. Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method

    Amount: $749,992.00

    ABSTRACT: Silicon carbide based power devices has several advantages because it can be used in very high power, high temperature, high frequency applications, where conventional silicon devices canno ...

    SBIRPhase II2014Department of Defense Air Force
  4. Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

    Amount: $899,995.00

    Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the l ...

    STTRPhase II2014Department of Defense Missile Defense Agency
  5. Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

    Amount: $99,994.00

    Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the l ...

    STTRPhase I2013Department of Defense Missile Defense Agency
  6. Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process

    Amount: $1,049,171.00

    Next generation infra-red focal plane array applications for night vision systems require high quality, large area HgCdTe epi-layers. Such layers are only possible with the use of (112) Si substrates ...

    SBIRPhase II2013Department of Defense Army
  7. Novel Rapid Chemical Mechanical Polishing (CMP) Process for Fabrication of High Performance CVD Diamond Particle Detectors

    Amount: $999,704.00

    Diamond possesses excellent particle detection characteristics, which makes it indispensible for its use in the radiation hard ultra-fast detectors for high energy physics applications. For such appl ...

    SBIRPhase II2013Department of Energy
  8. SBIR Phase I: Low Cost Scalable Manufacturing of Patterned Sapphire Substrates (PSS) for High Efficiency LEDs

    Amount: $150,000.00

    This Small Business Innovation Research Phase I project deals with development of a low-cost manufacturing process for high-efficiency patterned sapphire substrates for cheaper and more energy-efficie ...

    SBIRPhase I2013National Science Foundation
  9. Novel Polishing Process to Fabricate Ultra Low Thickness Variation Diamond Substrates for Next Generation Beam Tracking Detectors

    Amount: $999,507.00

    Diamond crystals with small total thickness variation (TTV) and local thickness variation (LTV) values are needed for position sensitive fast particle detectors for particle tracking/timing, and detec ...

    SBIRPhase II2012Department of Energy
  10. Novel Silicon Carbide Epitaxy Process for Dramatic Improvements to Material Characteristics, Cost, and Throughput

    Amount: $149,996.00

    ABSTRACT: Silicon carbide electronics technology has several advantages over conventional silicon electronics and it finds its application in several power electronics applications. However, the manu ...

    SBIRPhase I2012Department of Defense Air Force
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